Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material

(2012) Ramya Yeluri et al.   JOURNAL OF APPLIED PHYSICS

Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

(2011) Andrew D. Carter et al.   Applied Physics Express

Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition

(2011) Tetsuya Fujiwara et al.   Applied Physics Express

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics

(2011) Neeraj Nepal et al.   Applied Physics Express

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

(2011) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators

(2011) A. L. Corrion et al.   IEEE ELECTRON DEVICE LETTERS

Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG

(2011) Tongde Huang et al.   IEEE ELECTRON DEVICE LETTERS

Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing

(2011) Jong-Bong Ha et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

(2011) Eiji Miyazaki et al.   SOLID-STATE ELECTRONICS

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

(2011) K. Čičo et al.   SOLID-STATE ELECTRONICS

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

(2010) Guowang Li et al.   IEEE ELECTRON DEVICE LETTERS

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

(2009) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

(2009) O.I. Saadat et al.   IEEE ELECTRON DEVICE LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

(2009) B. L. Swenson et al.   JOURNAL OF APPLIED PHYSICS