Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

Title
Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 20, Pages 202902
Publisher
AIP Publishing
Online
2008-11-20
DOI
10.1063/1.3033404

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