Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology

Title
Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages 153508
Publisher
AIP Publishing
Online
2011-10-15
DOI
10.1063/1.3651331

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