On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

Published 2010 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 15, Pages 153503
Publisher
AIP Publishing
Online
2010-10-16
DOI
10.1063/1.3499364
References
View 2 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.