AlGaN/GaN MOSHEMT With High-Quality $\hbox{Gate}$–$\hbox{SiO}_{2}$ Achieved by Room-Temperature Radio Frequency Magnetron Sputtering

Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors

(2012) Liang Pang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Textured Magnesium Titanate as Gate Oxide for GaN-Based Metal-Oxide-Semiconductor Capacitor

(2011) Chu-Yun Hsiao et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

(2010) Z H Liu et al.   IEEE ELECTRON DEVICE LETTERS

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

(2010) Hiroshi Kambayashi et al.   SOLID-STATE ELECTRONICS

Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT

(2009) Xiaobin Xin et al.   IEEE ELECTRON DEVICE LETTERS

High-Quality SiO2Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas

(2009) Hirokazu Ueda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics

(2009) C.F. Shih et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Electrical Properties of Liquid Phase Deposited SiO[sub 2] on Photochemical Treated GaN

(2007) Ming-Kwei Lee et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates

(2007) Takehiko Nomura et al.   SOLID-STATE ELECTRONICS