Accurate analysis of parasitic current overshoot during forming operation in RRAMs

标题
Accurate analysis of parasitic current overshoot during forming operation in RRAMs
作者
关键词
-
出版物
MICROELECTRONIC ENGINEERING
Volume 88, Issue 7, Pages 1129-1132
出版商
Elsevier BV
发表日期
2011-04-06
DOI
10.1016/j.mee.2011.03.062

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