标题
Sub-10 nm low current resistive switching behavior in hafnium oxide stack
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 108, Issue 12, Pages 123106
出版商
AIP Publishing
发表日期
2016-03-25
DOI
10.1063/1.4944841
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Conductive Atomic Force Microscopy Investigation of Switching Thresholds in Titanium Dioxide Thin Films
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