Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

(2014) Siddheswar Maikap et al.   Nanoscale Research Letters

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

(2013) Amit Prakash et al.   Nanoscale Research Letters

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano