Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors

Plasmonic-Radiation-Enhanced Metal Oxide Nanowire Heterojunctions for Controllable Multilevel Memory

(2016) Luchan Lin et al.   ADVANCED FUNCTIONAL MATERIALS

Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure

(2016) Tohru Tsuruoka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

(2016) U. Celano et al.   Nanoscale

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

(2016) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

(2016) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

(2015) Felix Messerschmitt et al.   ADVANCED FUNCTIONAL MATERIALS

Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures

(2015) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

(2015) Jui-Yuan Chen et al.   ADVANCED MATERIALS

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Energy Loss Function of Solids Assessed by Ion Beam Energy-Loss Measurements: Practical Application to Ta2O5

(2015) Raul C. Fadanelli et al.   Journal of Physical Chemistry C

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

(2015) Umberto Celano et al.   Journal of Physical Chemistry Letters

Humidity Effect on Nanoscale Electrochemistry in Solid Silver Ion Conductors and the Dual Nature of Its Locality

(2015) Sang Mo Yang et al.   NANO LETTERS

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

(2015) Umberto Celano et al.   NANO LETTERS

Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching

(2015) William A. Hubbard et al.   NANO LETTERS

Position detection and observation of a conducting filament hidden under a top electrode in a Ta2O5-based atomic switch

(2015) Alpana Nayak et al.   NANOTECHNOLOGY

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory

(2014) Yu-Ting Huang et al.   ACS Nano

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application

(2014) Chun-Wei Huang et al.   NANO LETTERS

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

(2014) W H Xue et al.   NANOTECHNOLOGY

NF-κB-induced KIAA1199 promotes survival through EGFR signalling

(2014) Kateryna Shostak et al.   Nature Communications

Physical model for electroforming process in valence change resistive random access memory

(2014) Pengxiao Sun et al.   Journal of Computational Electronics

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories

(2013) Yu-Ting Huang et al.   ANALYTICAL CHEMISTRY

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

(2013) Wun-Cheng Luo et al.   SOLID-STATE ELECTRONICS

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching

(2013) Chih-Yi Liu et al.   Nanoscale Research Letters

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory

(2012) Chih-Yi Liu et al.   THIN SOLID FILMS

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

(2011) Nagarajan Raghavan et al.   MICROELECTRONIC ENGINEERING

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Observation of Atomic Diffusion at Twin-Modified Grain Boundaries in Copper

(2008) K.-C. Chen et al.   SCIENCE