Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch
出版年份 2015 全文链接
标题
Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch
作者
关键词
-
出版物
Scientific Reports
Volume 5, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-10-21
DOI
10.1038/srep15467
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices
- (2015) Anne Siemon et al. ADVANCED FUNCTIONAL MATERIALS
- 16 Boolean logics in three steps with two anti-serially connected memristors
- (2015) Yaxiong Zhou et al. APPLIED PHYSICS LETTERS
- Normally-off Logic Based on Resistive Switches—Part I: Logic Gates
- (2015) Simone Balatti et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system
- (2015) Shuang Gao et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Low Variability Resistor-Memristor Circuit Masking the Actual Memristor States
- (2015) Kyung Min Kim et al. Advanced Electronic Materials
- Exploiting Memristive BiFeO3Bilayer Structures for Compact Sequential Logics
- (2014) Tiangui You et al. ADVANCED FUNCTIONAL MATERIALS
- A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
- (2014) Jun Yeong Seok et al. ADVANCED FUNCTIONAL MATERIALS
- Retention failure analysis of metal-oxide based resistive memory
- (2014) Shinhyun Choi et al. APPLIED PHYSICS LETTERS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching
- (2013) Chao Chen et al. ACS Applied Materials & Interfaces
- Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
- (2013) S. Balatti et al. ADVANCED MATERIALS
- Conductance quantization in oxygen-anion-migration-based resistive switching memory devices
- (2013) C. Chen et al. APPLIED PHYSICS LETTERS
- Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis
- (2013) Z. Fang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device
- (2013) Y. S. Chen et al. JOURNAL OF APPLIED PHYSICS
- Oxide Heterostructure Resistive Memory
- (2013) Yuchao Yang et al. NANO LETTERS
- Ag/GeS x /Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
- (2013) Jan van den Hurk et al. Scientific Reports
- Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
- (2012) Shuang Gao et al. Journal of Physical Chemistry C
- Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations
- (2012) E Linn et al. NANOTECHNOLOGY
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks
- (2011) Yoon Cheol Bae et al. ADVANCED FUNCTIONAL MATERIALS
- Crossbar Logic Using Bipolar and Complementary Resistive Switches
- (2011) R. Rosezin et al. IEEE ELECTRON DEVICE LETTERS
- Nonvolatile resistive switching in single crystalline ZnO nanowires
- (2011) Yuchao Yang et al. Nanoscale
- Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments
- (2011) Fei Zhuge et al. NANOTECHNOLOGY
- Sub-nanosecond switching of a tantalum oxide memristor
- (2011) Antonio C Torrezan et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
- (2010) Qi Liu et al. ACS Nano
- Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays
- (2010) R. Rosezin et al. IEEE ELECTRON DEVICE LETTERS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Modeling for bipolar resistive memory switching in transition-metal oxides
- (2010) Ji Hyun Hur et al. PHYSICAL REVIEW B
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
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