A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime

(2011) N. Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

(2011) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

(2010) Shimeng Yu et al.   NANOTECHNOLOGY

Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices

(2009) Byungjin Cho et al.   ADVANCED MATERIALS