Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices

出版年份 2016 全文链接

标题

作者

关键词

RRAM, Si<sub>3</sub>N<sub>4</sub> films, Self-rectifying

出版物

Volume 69, Issue 3, Pages 435-438

出版商

Korean Physical Society

发表日期

2016-08-17

DOI

10.3938/jkps.69.435

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