Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

标题
Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
作者
关键词
Memristor, Silicon nitride, Capacitor, Bipolar resistive switching, Small-signal measurements, Light illumination
出版物
MICROELECTRONIC ENGINEERING
Volume 187-188, Issue -, Pages 134-138
出版商
Elsevier BV
发表日期
2017-11-07
DOI
10.1016/j.mee.2017.11.002

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