Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application
出版年份 2015 全文链接
标题
Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application
作者
关键词
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出版物
Nanoscale
Volume 7, Issue 14, Pages 6031-6038
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-03-04
DOI
10.1039/c4nr06406b
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