Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
出版年份 2014 全文链接
标题
Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 32, Pages 5086-5095
出版商
Wiley
发表日期
2014-05-26
DOI
10.1002/adfm.201400064
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt
- (2013) Kyung Jean Yoon et al. NANOTECHNOLOGY
- High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
- (2012) Wootae Lee et al. ACS Nano
- 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
- (2012) Gun Hwan Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Schottky diode with excellent performance for large integration density of crossbar resistive memory
- (2012) Gun Hwan Kim et al. APPLIED PHYSICS LETTERS
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
- (2011) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications
- (2011) Jiun-Jia Huang et al. IEEE ELECTRON DEVICE LETTERS
- Direct observation of local resistance switching in WO3films
- (2011) C Y Dong et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Electron and hole trapping in polycrystalline metal oxide materials
- (2011) K. P. McKenna et al. PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
- Resistance switching in HfO2 metal-insulator-metal devices
- (2010) P. Gonon et al. JOURNAL OF APPLIED PHYSICS
- A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays
- (2010) Woo Young Park et al. NANOTECHNOLOGY
- Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures
- (2010) Kyung Min Kim et al. NANOTECHNOLOGY
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Modeling for bipolar resistive memory switching in transition-metal oxides
- (2010) Ji Hyun Hur et al. PHYSICAL REVIEW B
- Selective liquid crystal molecule orientation on ion beam irradiated tantalum oxide ultrathin films
- (2009) Ji-Hun Lim et al. APPLIED PHYSICS LETTERS
- High-Density Crossbar Arrays Based on a Si Memristive System
- (2009) Sung Hyun Jo et al. NANO LETTERS
- New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
- (2008) N. Huby et al. MICROELECTRONIC ENGINEERING
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started