On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Role of the anode material in the unipolar switching of TiN\NiO\Ni cells

(2013) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Asymmetry and Switching Phenomenology in TiN\(Al2O3)\HfO2\Hf Systems

(2012) L. Goux et al.   ECS Solid State Letters

TiNx/HfO2 interface dipole induced by oxygen scavenging

(2011) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

(2011) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Oxygen vacancy levels and interfaces of Al2O3

(2009) D. Liu et al.   MICROELECTRONIC ENGINEERING

Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

(2008) Peter Broqvist et al.   APPLIED PHYSICS LETTERS