Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

(2014) Sangheon Lee et al.   APPLIED PHYSICS LETTERS

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

(2014) Sangheon Lee et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure

(2014) Sungjun Kim et al.   International Journal of Nanotechnology

A New Programming Method to Alleviate the Program Speed Variation in Three-Dimensional Stacked Array NAND Flash Memory

(2014) Yoon Kim et al.   Journal of Semiconductor Technology and Science

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAM

(2014) N. Tamanna et al.   ECS Solid State Letters

Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

(2013) Kyung-Chang Ryoo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory

(2013) Hong-Yu Chen et al.   NANOTECHNOLOGY

A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt

(2013) H.-W. Ahn et al.   ECS Solid State Letters

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

(2011) Hee-Dong Kim et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

(2010) Hee-Dong Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide

(2008) Kuan Yew Cheong et al.   JOURNAL OF APPLIED PHYSICS