Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

(2020) Anton E. O. Persson et al.   APPLIED PHYSICS LETTERS

Dual-Mode On-to-Off Modulation of Plasmon-Induced Transparency and Coupling Effect in Patterned Graphene-Based Terahertz Metasurface

(2020) Zhimin Liu et al.   Nanoscale Research Letters

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

(2020) David Lehninger et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium

(2020) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

(2020) Beom Yong Kim et al.   APPLIED PHYSICS LETTERS

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

(2020) Kasidit Toprasertpong et al.   APPLIED PHYSICS LETTERS

Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition

(2020) Jae Hur et al.   NANOTECHNOLOGY

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

(2020) Si Joon Kim et al.   Materials

Electric field cycling-mediated variations in defect distributions associated with wake-up and split-up behaviors of a ferroelectric Si-doped HfO2 thin film

(2020) Myeong Seop Song et al.   APPLIED PHYSICS LETTERS

A preliminary study on mist CVD-derived ferroelectric Hf1−x Zr x O2 films featuring its possibility of suitable operation for non-volatile analog memory

(2020) Yuki Fujiwara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

TiN/Gd:HfO2/TiN capacitors grown by PEALD showing high endurance ferroelectric switching

(2020) S. Belahcen et al.   APPLIED PHYSICS LETTERS

Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

(2020) Youngin Goh et al.   APPLIED PHYSICS LETTERS

Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments

(2019) Shinji Migita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

(2019) Takashi Onaya et al.   MICROELECTRONIC ENGINEERING

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

(2019) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

(2019) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

(2019) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing

(2019) Toshiyuki Tabata   Applied Physics Express

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

(2018) Glen Walters et al.   APPLIED PHYSICS LETTERS

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

(2018) Taeho Kim et al.   APPLIED PHYSICS LETTERS

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

(2018) Éamon O’Connor et al.   APL Materials

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimizing process conditions for improved Hf 1−x Zr x O 2 ferroelectric capacitor performance

(2017) Terence Mittmann et al.   MICROELECTRONIC ENGINEERING

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Annealing behavior of ferroelectric Si-doped HfO2 thin films

(2016) Patrick D. Lomenzo et al.   THIN SOLID FILMS

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Low Temperature Compatible Hafnium Oxide Based Ferroelectrics

(2015) Michael Hoffmann et al.   FERROELECTRICS

Review of solution-processed oxide thin-film transistors

(2014) Si Joon Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Activated Solutions Enabling Low-Temperature Processing of Functional Ferroelectric Oxides for Flexible Electronics

(2013) Iñigo Bretos et al.   ADVANCED MATERIALS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

(2013) Mami Fujii et al.   APPLIED PHYSICS LETTERS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Low-Temperature Solution-Processed ZrO2 Gate Insulators for Thin-Film Transistors Using High-Pressure Annealing

(2011) Si Joon Kim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

(2011) Myung-Koo Kang et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

(2010) Myung-Koo Kang et al.   APPLIED PHYSICS LETTERS