Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization
Published 2020 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 117, Issue 24, Pages 242901
Publisher
AIP Publishing
Online
2020-12-14
DOI
10.1063/5.0029516
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- The effects of thin film homogeneity on the performance of ferroelectric tunnel junctions
- (2020) A Dörfler et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Sub-nanosecond memristor based on ferroelectric tunnel junction
- (2020) Chao Ma et al. Nature Communications
- Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
- (2020) Chankeun Yoon et al. Nano Convergence
- Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices
- (2020) Milena Cervo Sulzbach et al. ADVANCED FUNCTIONAL MATERIALS
- Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction
- (2020) Junghyeon Hwang et al. IEEE ELECTRON DEVICE LETTERS
- Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions
- (2020) Aniruddh Shekhawat et al. NANOTECHNOLOGY
- Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
- (2020) Tianqi Yu et al. Science China-Materials
- Demonstration of High Ferroelectricity (P$_r$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films
- (2019) Dipjyoti Das et al. IEEE ELECTRON DEVICE LETTERS
- Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
- (2019) Hojoon Ryu et al. Scientific Reports
- Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
- (2018) Rongrong Cao et al. IEEE ELECTRON DEVICE LETTERS
- Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing
- (2018) Taeho Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction
- (2018) Zhipeng Dong et al. JOURNAL OF APPLIED PHYSICS
- The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2
- (2018) Youngin Goh et al. NANOTECHNOLOGY
- Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing
- (2018) Youngin Goh et al. APPLIED PHYSICS LETTERS
- Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications
- (2018) Lin Chen et al. Nanoscale
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides
- (2018) Min Hyuk Park et al. Advanced Electronic Materials
- Electron transport across ultrathin ferroelectric Hf 0.5 Zr 0.5 O 2 films on Si
- (2017) A. Chouprik et al. MICROELECTRONIC ENGINEERING
- Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
- (2016) Anna Chernikova et al. ACS Applied Materials & Interfaces
- Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films
- (2016) Takahisa Shiraishi et al. APPLIED PHYSICS LETTERS
- Ferroelectricity and tunneling electroresistance effect in asymmetric ferroelectric tunnel junctions
- (2016) L. L. Tao et al. JOURNAL OF APPLIED PHYSICS
- Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers
- (2016) Lingfei Wang et al. NANO LETTERS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
- (2015) Hong-Sub Lee et al. ACS Applied Materials & Interfaces
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
- (2015) R. Materlik et al. JOURNAL OF APPLIED PHYSICS
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
- (2015) Patrick D. Lomenzo et al. JOURNAL OF APPLIED PHYSICS
- Functional ferroelectric tunnel junctions on silicon
- (2015) Rui Guo et al. Scientific Reports
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
- (2014) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Ferroelectric tunnel junctions for information storage and processing
- (2014) Vincent Garcia et al. Nature Communications
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
- (2013) Zheng Wen et al. NATURE MATERIALS
- A ferroelectric memristor
- (2012) André Chanthbouala et al. NATURE MATERIALS
- Solid-state memories based on ferroelectric tunnel junctions
- (2011) André Chanthbouala et al. Nature Nanotechnology
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More