Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

Published 2019 View Full Article

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Title
Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition
Authors
Keywords
Plasma-enhanced atomic layer deposition, Ferroelectric Hf, x, Zr, 1-x, O, 2, thin film, Low temperature fabrication process, High-k material
Journal
MICROELECTRONIC ENGINEERING
Volume -, Issue -, Pages 111013
Publisher
Elsevier BV
Online
2019-05-29
DOI
10.1016/j.mee.2019.111013

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