Low-Temperature Solution-Processed ZrO2 Gate Insulators for Thin-Film Transistors Using High-Pressure Annealing

Title
Low-Temperature Solution-Processed ZrO2 Gate Insulators for Thin-Film Transistors Using High-Pressure Annealing
Authors
Keywords
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Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 11, Pages E35
Publisher
The Electrochemical Society
Online
2011-09-29
DOI
10.1149/2.006111esl

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