Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM

Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics

(2020) Alexey Mikhaylov et al.   Frontiers in Neuroscience

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

(2020) Siddheswar Maikap et al.   Advanced Electronic Materials

In‐Memory Computing with Memristor Content Addressable Memories for Pattern Matching

(2020) Catherine E. Graves et al.   ADVANCED MATERIALS

Effect of Film Thickness and Temperature on the Resistive Switching Characteristics of the Pt/HfO2/Al2O3/TiN Structure

(2020) Yulin Liu et al.   SOLID-STATE ELECTRONICS

Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

(2020) Hojeong Ryu et al.   Nanomaterials

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

(2020) Junhyeok Choi et al.   Coatings

Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode

(2020) Chandreswar Mahata et al.   CERAMICS INTERNATIONAL

Improved Intrinsic Nonlinear Characteristics of Ta2O5/Al2O3-Based Resistive Random-Access Memory for High-Density Memory Applications

(2020) Ji-Ho Ryu et al.   Materials

Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

(2020) Hyojong Cho et al.   Nanomaterials

Memristive crossbar arrays for brain-inspired computing

(2019) Qiangfei Xia et al.   NATURE MATERIALS

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

(2019) Lei Wu et al.   Nanoscale Research Letters

Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device

(2019) Pengfei Ma et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights

(2019) A V Emelyanov et al.   NANOTECHNOLOGY

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

(2019) Alexey Mikhaylov et al.   Advanced Materials Technologies

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

(2018) Alessandro Bricalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

(2018) Sungjun Kim et al.   Small

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

ALD preparation of high-k HfO2 thin films with enhanced energy density and efficient electrostatic energy storage

(2017) Le Zhang et al.   RSC Advances

Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device

(2016) Xinman Chen et al.   APPLIED PHYSICS LETTERS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

(2015) Fei Zhou et al.   APPLIED PHYSICS LETTERS

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

(2015) Lai-Guo Wang et al.   Nanoscale Research Letters

Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents

(2014) Heeyoung Jeon et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Resistive switching of oxygen enhanced TiO2 thin-film devices

(2013) Iulia Salaoru et al.   APPLIED PHYSICS LETTERS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS