Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

What Will Come After V-NAND-Vertical Resistive Switching Memory?

(2019) Kyung Jean Yoon et al.   Advanced Electronic Materials

Memory State Protected from Leakage Current in Ti/SiN/NiN/Pt Bilayer Resistive Random-Access Memory Devices for Array Applications

(2019) min ju yun et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a ‐VO x Asymmetric Crossbars

(2019) Shruti Nirantar et al.   Advanced Electronic Materials

An ovonic threshold switching selector based on Se-rich GeSe chalcogenide

(2019) Bing Song et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device

(2019) Sung Joon Yoon et al.   APPLIED PHYSICS LETTERS

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

(2019) Ying-Chen Chen et al.   Scientific Reports

Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

(2019) Yi Shuang et al.   Scientific Reports

Electronic Conduction Mechanisms in Insulators

(2018) Tsung-Han Chiang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

(2018) Sungjun Kim et al.   Small

Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current

(2018) Min-Hwi Kim et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

(2017) Kyung Jean Yoon et al.   Advanced Electronic Materials

Synaptic devices based on purely electronic memristors

(2016) Ruobing Pan et al.   APPLIED PHYSICS LETTERS

Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device

(2016) Xinman Chen et al.   APPLIED PHYSICS LETTERS

Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

(2016) Debanjan Jana et al.   APPLIED PHYSICS LETTERS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Physical Unclonable Function Exploiting Sneak Paths in Resistive Cross-point Array

(2016) Ligang Gao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device

(2016) Xue Yang et al.   Nanoscale

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

(2016) Sungjun Kim et al.   AIP Advances

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

On the Optimal ON/OFF Resistance Ratio for Resistive Switching Element in One-Selector One-Resistor Crosspoint Arrays

(2015) Leqi Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

(2015) Sung Hyun Jo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

(2015) Shuang Gao et al.   Nanoscale

Physical and chemical mechanisms in oxide-based resistance random access memory

(2015) Kuan-Chang Chang et al.   Nanoscale Research Letters

Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

(2014) Bin Gao et al.   ACS Nano

A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt

(2013) H.-W. Ahn et al.   ECS Solid State Letters

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps

(2012) S. Schmelzer et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications

(2011) Jiun-Jia Huang et al.   IEEE ELECTRON DEVICE LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES