Effect of Film Thickness and Temperature on the Resistive Switching Characteristics of the Pt/HfO2/Al2O3/TiN Structure

Published 2020 View Full Article

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Title
Effect of Film Thickness and Temperature on the Resistive Switching Characteristics of the Pt/HfO2/Al2O3/TiN Structure
Authors
Keywords
RRAM, Pt/HfO, 2, /Al, 2, O, 3, /TiN, Film thickness, Temperature
Journal
SOLID-STATE ELECTRONICS
Volume -, Issue -, Pages 107880
Publisher
Elsevier BV
Online
2020-08-11
DOI
10.1016/j.sse.2020.107880

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