Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device

Published 2019 View Full Article

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Title
Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device
Authors
Keywords
HfAlO, High–k, Gate insulator, A–InGaZnO, Thin–film transistor, Atomic layer deposition, Low–power device
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 792, Issue -, Pages 543-549
Publisher
Elsevier BV
Online
2019-04-06
DOI
10.1016/j.jallcom.2019.04.015

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