Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode

Published 2020 View Full Article

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Title
Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode
Authors
Keywords
RRAM, Transparent electrode, Al-doped HfO, 2, Multilevel conductance, Synaptic properties
Journal
CERAMICS INTERNATIONAL
Volume -, Issue -, Pages -
Publisher
Elsevier BV
Online
2020-08-26
DOI
10.1016/j.ceramint.2020.08.238

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