Improved Intrinsic Nonlinear Characteristics of Ta2O5/Al2O3-Based Resistive Random-Access Memory for High-Density Memory Applications

Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications

(2020) Ying-Chen Chen et al.   JOURNAL OF ELECTRONIC MATERIALS

Ti-doped alumina based reliable resistive switching in sub-μA regime

(2020) Dong Kyu Lee et al.   APPLIED PHYSICS LETTERS

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

(2020) Junhyeok Choi et al.   Coatings

Memristive Devices and Networks for Brain‐Inspired Computing

(2019) Teng Zhang et al.   Physica Status Solidi-Rapid Research Letters

Time-Efficient Stateful Dual-Bit-Memristor Logic

(2019) Nuo Xu et al.   Physica Status Solidi-Rapid Research Letters

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

(2019) Hong Wang et al.   Physica Status Solidi-Rapid Research Letters

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

(2019) Wenbin Zhang et al.   Physica Status Solidi-Rapid Research Letters

Indium Diffusion Behavior and Application in HfO 2 ‐based Conductive Bridge Random Access Memory

(2019) Hao-Xuan Zheng et al.   Physica Status Solidi-Rapid Research Letters

Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

(2019) Anthonin Verdy et al.   Physica Status Solidi-Rapid Research Letters

Passivation properties of alumina for multicrystalline silicon nanostructure prepared by spin-coating method

(2018) Ye Jiang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Corrigendum: Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application (2018 J. Phys. D: Appl. Phys. 51 055108)

(2018) Ying-Chen Chen et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

(2018) Sungjun Kim et al.   Nanoscale Research Letters

Oxygen-Vacancy Induced Resistive Switching Effect in Mn-Doped ZnO Memory Devices

(2018) Sih-Sian Li et al.   Physica Status Solidi-Rapid Research Letters

Single-Cell Stateful Logic Using a Dual-Bit Memristor

(2018) Kyung Min Kim et al.   Physica Status Solidi-Rapid Research Letters

An FPGA-Based Hardware Emulator for Neuromorphic Chip With RRAM

(2018) Tao Luo et al.   IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS

Design of Ternary Neural Network With 3-D Vertical RRAM Array

(2017) Zhiwei Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Random Access Memory for Future Information Processing System

(2017) Huaqiang Wu et al.   PROCEEDINGS OF THE IEEE

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

(2017) Lisha Zhu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

(2017) Xiaobing Yan et al.   Journal of Materials Chemistry C

Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device

(2016) Xinman Chen et al.   APPLIED PHYSICS LETTERS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

(2016) Younghee Lee et al.   CHEMISTRY OF MATERIALS

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

(2016) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

(2016) Jiantao Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Tuning tunnel barrier in Si 3 N 4 -based resistive memory embedding SiO 2 for low-power and high-density cross-point array applications

(2016) Sungjun Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

(2016) Somsubhra Chakrabarti et al.   Nanoscale Research Letters

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

(2016) Somsubhra Chakrabarti et al.   Nanoscale Research Letters

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring

(2015) K.V. Egorov et al.   APPLIED SURFACE SCIENCE

One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector

(2015) Leqi Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

(2015) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

(2015) Pai-Yu Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

3-D Cross-Point Array Operation on ${\rm AlO}_{y}/{\rm HfO}_{x}$ -Based Vertical Resistive Switching Memory

(2014) Bin Gao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications

(2014) Yingtao Li et al.   NANOTECHNOLOGY

Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure

(2013) Chun-Hu Cheng et al.   CURRENT APPLIED PHYSICS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

(2013) Sangsu Park et al.   NANOTECHNOLOGY

A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

(2012) Yinglong Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

(2012) Sangsu Park et al.   Physica Status Solidi-Rapid Research Letters

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Preparation and characterization of TaAlOx high-κ dielectric for metal–insulator–metal capacitor applications

(2010) M.K. Hota et al.   THIN SOLID FILMS