First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

Published 2017 View Full Article

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Title
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 6, Pages 783-785
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-06-08
DOI
10.1109/led.2017.2696986

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