1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of

Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics

(2018) Asanka Jayawardena et al.   APPLIED PHYSICS LETTERS

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

(2018) Xiaodong Yan et al.   APPLIED PHYSICS LETTERS

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

(2018) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

(2018) Kelson D. Chabak et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

(2018) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

(2018) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

Charge Trapping in Al2O3/ $\beta$ -Ga2O3-Based MOS Capacitors

(2018) Maruf A. Bhuiyan et al.   IEEE ELECTRON DEVICE LETTERS

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

(2018) Hang Dong et al.   AIP Advances

Lateral β-Ga2O3 Schottky Barrier Diode on Sapphire Substrate with Reverse Blocking Voltage of 1.7 kV

(2018) Zhuangzhuang Hu et al.   IEEE Journal of the Electron Devices Society

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

(2018) Zongyang Hu et al.   APPLIED PHYSICS LETTERS

Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

(2017) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

(2017) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

(2017) Jiancheng Yang et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

(2017) Wenshen Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3

(2017) Liheng Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Al2O3/ $\beta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

(2016) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Epitaxially grown crystalline Al2O3interlayer on β-Ga2O3(010) and its suppressed interface state density

(2016) Takafumi Kamimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

(2015) Takeyoshi Onuma et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

(2014) Takafumi Kamimura et al.   APPLIED PHYSICS LETTERS

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS