Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$

Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold

(2012) Qian Xie et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

(2012) Somaia Sarwat Sylvia et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

(2011) Neerav Kharche et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

(2010) Tao Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

(2010) Timothy B. Boykin et al.   PHYSICAL REVIEW B

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

(2009) Changwook Jeong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Multi-Channel Field-Effect Transistor (MCFET)—Part I: Electrical Performance and Current Gain Analysis

(2009) Emilie Bernard et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

(2008) Yang Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Toward Nanowire Electronics

(2008) Joerg Appenzeller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES