Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics

Title
Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics
Authors
Keywords
-
Journal
PROCEEDINGS OF THE IEEE
Volume 101, Issue 7, Pages 1609-1619
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-05-15
DOI
10.1109/jproc.2013.2257634

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now