Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Published 2011 View Full Article

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Journal

IEEE ELECTRON DEVICE LETTERS

Volume 32, Issue 9, Pages 1224-1226

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2011-07-27

DOI

10.1109/led.2011.2159824

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