30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 8, Pages 830-833
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-07-30
DOI
10.1109/led.2008.2000794

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.