标题
Antiferroelectricity in thin-filmZrO2from first principles
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 90, Issue 14, Pages -
出版商
American Physical Society (APS)
发表日期
2014-10-14
DOI
10.1103/physrevb.90.140103
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
- (2014) S. Clima et al. APPLIED PHYSICS LETTERS
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles
- (2013) Sebastian E. Reyes-Lillo et al. PHYSICAL REVIEW B
- OrthorhombicABCSemiconductors as Antiferroelectrics
- (2013) Joseph W. Bennett et al. PHYSICAL REVIEW LETTERS
- Growth, dielectric properties, and memory device applications of ZrO2 thin films
- (2013) Debashis Panda et al. THIN SOLID FILMS
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
- (2012) Stefan Mueller et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Defect configuration and phase stability of cubic versus tetragonal yttria-stabilized zirconia
- (2012) Hepeng Ding et al. SOLID STATE IONICS
- Ferroelectricity in Gd-Doped HfO2Thin Films
- (2012) S. Mueller et al. ECS Journal of Solid State Science and Technology
- Phase transitions in ferroelectric silicon doped hafnium oxide
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications
- (2011) J. Müller et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in yttrium-doped hafnium oxide
- (2011) J. Müller et al. JOURNAL OF APPLIED PHYSICS
- The Antiferroelectric ↔ Ferroelectric Phase Transition in Lead-Containing and Lead-Free Perovskite Ceramics
- (2011) Xiaoli Tan et al. JOURNAL OF THE AMERICAN CERAMIC SOCIETY
- Development of hafnium based high-k materials—A review
- (2011) J.H. Choi et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Capacitors with an Equivalent Oxide Thickness of
- (2010) Seong Keun Kim et al. ADVANCED FUNCTIONAL MATERIALS
- High-Strain Lead-free Antiferroelectric Electrostrictors
- (2009) Shan-Tao Zhang et al. ADVANCED MATERIALS
- ABINIT: First-principles approach to material and nanosystem properties
- (2009) X. Gonze et al. COMPUTER PHYSICS COMMUNICATIONS
- High-k dielectrics for future generation memory devices (Invited Paper)
- (2009) J.A. Kittl et al. MICROELECTRONIC ENGINEERING
- The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles
- (2008) Dominik Fischer et al. APPLIED PHYSICS LETTERS
- Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates
- (2008) Seong Keun Kim et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations
- (2008) Dominik Fischer et al. JOURNAL OF APPLIED PHYSICS
- Structural and electrical properties of the 2Bi2O3·3ZrO2 system
- (2008) Čedomir Jovalekić et al. JOURNAL OF SOLID STATE CHEMISTRY
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