Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

(2010) Takeshi Horiuchi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Fabrication and characterization of sub-0.6-µm ferroelectric-gate field-effect transistors

(2010) Le Van Hai et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

FeCMOS logic inverter circuits with nonvolatile-memory function

(2009) Mitsue Takahashi et al.   IEICE Electronics Express

Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

(2009) Qiu-Hong Li et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Operational method of a ferroelectric (Fe)-NAND flash memory array

(2009) Shouyu Wang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

(2008) Shoun Matsunaga et al.   Applied Physics Express

Basic operation of novel ferroelectric CMOS circuits

(2008) M. Takahashi et al.   ELECTRONICS LETTERS

Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications

(2008) Wen-Chieh Shih et al.   JOURNAL OF APPLIED PHYSICS

Metal–ferroelectric–insulator–Si devices using HfTaO buffer layers

(2008) Xu-bing Lu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Threshold-voltage distribution of Pt/SrBi2Ta2O9/Hf–Al–O/Si MFIS FETs

(2008) Qiu-Hong Li et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY