Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

标题
Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 8, Pages 1193-1196
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2020-06-12
DOI
10.1109/led.2020.3001639

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