Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory

标题
Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 115, Issue 15, Pages 153502
出版商
AIP Publishing
发表日期
2019-10-10
DOI
10.1063/1.5119948

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