Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator

(2019) Wan-Ho Choi et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition

(2019) Dong-Kwon Lee et al.   MATERIALS LETTERS

Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films

(2018) Min Jung Chung et al.   ACS Applied Materials & Interfaces

Demonstrating the Ultrathin Metal–Insulator– Metal Diode Using TiN/ZrO2–Al2O3–ZrO2 Stack by Employing RuO2 Top Electrode

(2018) Woojin Jeon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Future of dynamic random-access memory as main memory

(2018) Seong Keun Kim et al.   MRS BULLETIN

Controlling the Current Conduction Asymmetry of HfO2 Metal–Insulator–Metal Diodes by Interposing Al2O3 Layer

(2018) Woojin Jeon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Controlling the Electrical Characteristics of ZrO2 /Al2 O3 /ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition

(2018) Cheol Hyun An et al.   Physica Status Solidi-Rapid Research Letters

Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3

(2017) N. Hornsveld et al.   RSC Advances

Process–property relationship in high-k ALD SrTiO3 and BaTiO3: a review

(2017) J. H. Shim et al.   Journal of Materials Chemistry C

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

(2016) Yunseong Lee et al.   ACS Nano

Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications

(2016) Sita Dugu et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor

(2015) Woongkyu Lee et al.   CHEMISTRY OF MATERIALS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Asymmetry in electrical properties of Al-doped TiO2film with respect to bias voltage

(2015) Woojin Jeon et al.   Physica Status Solidi-Rapid Research Letters

Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

(2015) Kanghoon Yim et al.   NPG Asia Materials

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

(2014) Woojin Jeon et al.   ACS Applied Materials & Interfaces

Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film

(2014) Woojin Jeon et al.   ACS Applied Materials & Interfaces

Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

(2014) Yeon Woo Yoo et al.   ACS Applied Materials & Interfaces

Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors

(2014) Sang Yeon Lee et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications

(2014) Johan Swerts et al.   IEEE ELECTRON DEVICE LETTERS

A brief review of atomic layer deposition: from fundamentals to applications

(2014) Richard W. Johnson et al.   Materials Today

Controlling Work Function and Damaging Effects of Sputtered RuO2 Gate Electrodes by Changing Oxygen Gas Ratio during Sputtering

(2013) Hyo Kyeom Kim et al.   ACS Applied Materials & Interfaces

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤100°C) using O3 as an oxygen source

(2013) Jeong Hwan Kim et al.   APPLIED SURFACE SCIENCE

Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

(2013) Woongkyu Lee et al.   CHEMISTRY OF MATERIALS

Review on Atomic Layer Deposition and Applications of Oxide Thin Films

(2013) Joice Sophia Ponraj et al.   CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates

(2013) Dominik Martin et al.   JOURNAL OF APPLIED PHYSICS

Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma

(2013) Claudia Richter et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Scaling of equivalent oxide thickness of atomic layer deposited HfO2 film using RuO2 electrodes suppressing the dielectric dead-layer effect

(2012) Hyo Kyeom Kim et al.   APPLIED PHYSICS LETTERS

Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition

(2012) Deok-Yong Cho et al.   CHEMISTRY OF MATERIALS

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

(2012) Steve Knebel et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor

(2012) Shahin A. Mojarad et al.   JOURNAL OF APPLIED PHYSICS

Role of defect relaxation for trap-assisted tunneling in high-κthin films: A first-principles kinetic Monte Carlo study

(2012) Gunther Jegert et al.   PHYSICAL REVIEW B

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

(2011) Jeong Hwan Han et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of SrTiO3Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

(2011) Sang Woon Lee et al.   CHEMISTRY OF MATERIALS

The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

(2011) Hyung-Suk Jung et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2Layer

(2011) Hyuk-Min Kwon et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

(2011) Gunther Jegert et al.   JOURNAL OF APPLIED PHYSICS

Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy

(2011) Jae Hyuck Jang et al.   JOURNAL OF APPLIED PHYSICS

A comparative study of the microstructure-dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach

(2011) Mihaela Popovici et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

(2011) Seong Keun Kim et al.   Physica Status Solidi-Rapid Research Letters

Polaronic effects in TiO2calculated by the HSE06 hybrid functional: Dopant passivation by carrier self-trapping

(2011) Peter Deák et al.   PHYSICAL REVIEW B

Mechanical and structural characterization of atomic layer deposition-based ZnO films

(2011) K Tapily et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Monte Carlo Simulation of Leakage Currents in $ \hbox{TiN/ZrO}_{2}/\hbox{TiN}$ Capacitors

(2010) Gunther Jegert et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications

(2009) S. Monaghan et al.   IEEE ELECTRON DEVICE LETTERS

Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films

(2009) Michael Shandalov et al.   JOURNAL OF APPLIED PHYSICS

Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

(2008) Seong Keun Kim et al.   ADVANCED MATERIALS

Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

(2008) Seong Keun Kim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influences of a Crystalline Seed Layer during Atomic Layer Deposition of SrTiO[sub 3] Thin Films Using Ti(O-iPr)[sub 2](thd)[sub 2], Sr(thd)[sub 2], and H[sub 2]O

(2008) Sang Woon Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films

(2008) B. Lee et al.   MICROELECTRONIC ENGINEERING

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B

Physical and electrical characterization of high-k ZrO2 metal–insulator–metal capacitor

(2008) Joo-Hyung Kim et al.   THIN SOLID FILMS

TiO[sub 2]∕Al[sub 2]O[sub 3]∕TiO[sub 2] Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition

(2007) Woojin Jeon et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS