Article
Engineering, Electrical & Electronic
Sumit R. Patil, Vaibhav Y. Borokar, Md. Rasadujjaman, Jing Zhang, Shi J. Ding, Ashok M. Mahajan
Summary: In this study, ZrO2/La2O3/ZrO2/La2O3/ZrO2 (ZLZLZ) penta-layered nanolaminates were deposited using an indigenously developed plasma-enhanced atomic layer deposition (ID-PEALD) system, and utilized as metal-insulator-metal (MIM) capacitors. The nanolaminates exhibited low roughness with a minimum value of 0.2624 nm. The pyrochlore formation of ZLZLZ nanolaminates was studied via X-ray photoelectron spectroscopy, and the nanolaminates were annealed at 400 degrees C. The MIM capacitors achieved a low leakage current density of 9.70 x 10(-7) A/cm^2 and a low barrier height of 0.12 eV, while maintaining a high capacitance of 30.5 fF/μm^2.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Chemistry, Physical
A. M. Mumlyakov, M. Shibalov, I. Trofimov, M. G. Verkholetov, A. P. Orlov, G. D. Diudbin, S. A. Evlashin, P. A. Nekludova, Yu Anufriev, A. M. Tagachenkov, E. Zenova, M. A. Tarkhov
Summary: This study investigated the dielectric properties of HfOx, AlOx, TaOx, and HfAlTaOx thin films, as well as their application in MIM capacitors. The HfAlTaOx compound showed significantly higher dielectric strength compared to other dielectric materials.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Min Ji Jeong, Seung Won Lee, Yoonchul Shin, Jeong-Hun Choi, Ji-Hoon Ahn
Summary: This study proposes a new method to realize rutile-TiO2 thin films on TiN electrodes without an additional post-thermal process. By introducing Sn and optimizing TiO2, a high dielectric constant and improvement in leakage current can be achieved. This approach provides a new direction for future high-k research on next-generation DRAM capacitors.
SURFACES AND INTERFACES
(2023)
Article
Materials Science, Ceramics
Heecheol Shin, Hyobin Choi, Jaeseong Lim, Wanggon Lee, Kumar Mohit, Younsoo Kim, Hyung-Suk Jung, Hanjin Lim, Hyungtak Seo
Summary: The shrinkage and leakage current suppression of MIM capacitors are crucial for maintaining desired charge storage and retention levels in DRAM. This study uses ARXPS, SE, and temperature dependent I-V analysis to analyze a ZrO2-based dielectric film and its interface with a TiO2/Al2O3 buffer layer, demonstrating the importance of the buffer layer in controlling leakage current.
JOURNAL OF ASIAN CERAMIC SOCIETIES
(2022)
Article
Biochemistry & Molecular Biology
Li Xiong, Jin Hu, Zhao Yang, Xianglin Li, Hang Zhang, Guanhua Zhang
Summary: This study presents the construction and dielectric properties investigation of metal-insulator-metal capacitors based on atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric films. The influence of dielectric layer material and thickness on the performance of the capacitors was systematically investigated. Among them, the 25 nm Al2O3-based dielectric capacitor exhibited superior electrical performance and stability.
Article
Engineering, Electrical & Electronic
P. La Torraca, F. Caruso, A. Padovani, S. Spiga, G. Tallarida, L. Larcher
Summary: The study presents a novel method for extracting defect properties from thick metal-insulator-metal (MIM) stacks using I-V curve hysteresis measured at low electric field. The defects located near the electrode-insulator interfaces and aligned with the stack Fermi level can be detected and profiled, making this technique applicable to various electronic devices such as capacitors, embedded memories, and thin film transistors.
IEEE ELECTRON DEVICE LETTERS
(2021)
Review
Chemistry, Multidisciplinary
Jia-Yao Pei, Li-Juan Yin, Shao-Long Zhong, Zhi-Min Dang
Summary: Polymer-based dielectrics have gained significant attention in the field of high-power energy storage for their flexibility and fast charge-discharge capability. This review emphasizes the importance of suppressing loss in polymer-based dielectrics and discusses the sources of loss, related measurements, recent research results, and challenges and opportunities for high-efficiency polymer-based dielectric design.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Ceramics
Jaemin Kim, Jinsu Park, Duy Phong Pham, Myung Soo Yeo, HwaSung Rhee, Youg-Sang Kim, Eun-Chel Cho, Junsin Yi
Summary: The characteristics of HfO2 thin films with and without UV exposure post-treatment were discussed in this study. The results showed that the post-treated HfO2 films had higher crystallinity, lower suboxide bond proportion, higher dielectric constant, and improved device capacitance compared to the untreated films. The proposed post-treatment process has the significant potential in enhancing the quality of HfO2 thin films for semiconductor devices.
CERAMICS INTERNATIONAL
(2021)
Article
Chemistry, Multidisciplinary
Chit Siong Lau, Jing Yee Chee, Liemao Cao, Zi-En Ooi, Shi Wun Tong, Michel Bosman, Fabio Bussolotti, Tianqi Deng, Gang Wu, Shuo-Wang Yang, Tong Wang, Siew Lang Teo, Calvin Pei Yu Wong, Jian Wei Chai, Li Chen, Zhong Ming Zhang, Kah-Wee Ang, Yee Sin Ang, Kuan Eng Johnson Goh
Summary: The research revealed that carrier mobility in WS2 devices is influenced by interface roughness rather than the commonly thought charge impurity limit. The use of HfO2 enables the electrostatic gate-defined quantum confinement of quantum dots in WS2 devices, opening up new possibilities for their application in quantum information processing.
ADVANCED MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Ryo Matsumura, Naoki Fukata
Summary: This study systematically investigates and characterizes the phenomenon of blistering in atomic layer-deposited aluminum oxide layers, proposing a mechanism for blister formation using a hydrogen outgassing model. It successfully detects hydrogen gas generation from the Si-Al2O3 interface using blister-penetrating Raman spectroscopy. The proposed method of suppressing blister formation through surface treatment or passivation to eliminate Si-H bonds will provide important insights applicable to various applications such as electronic devices and nanostructured solar cells.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Jinyu Lu, Gang He, Jin Yan, Zhenxiang Dai, Ganhong Zheng, Shanshan Jiang, Lesheng Qiao, Qian Gao, Zebo Fang
Summary: The study shows that the ALD-derived Al2O3 interface passivation layer can effectively prevent the appearance of substrate diffusion oxides and optimize gate dielectric performance. Experimental results demonstrate that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density, while conductivity analysis reveals that it has the lowest interfacial density of states value. Overall, the Sm2O3/Al2O3/InP stacked gate dielectric shows promise for future InP-based MOSFET devices.
Article
Engineering, Electrical & Electronic
Dong Hee Han, Seungwoo Lee, Ji Hyeon Hwang, Youngjin Kim, Marceline Bonvalot, Christophe Vallee, Patrice Gonon, Woojin Jeon
Summary: This article reveals the origin of capacitance degradation depending on operation frequency and investigates the effect of defects, especially oxygen vacancies, on the electrical properties of metal-insulator-metal (MIM) capacitors. Eventually, the mechanism of frequency dependence related to oxygen vacancy in the insulator of the MIM capacitor was identified.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Meiyi Jing, Tongkang Lu, Yong Sun, Xiaoliang Zhao, Ze Feng, Yitong Wang, Hui Liu, Wei-Hua Wang, Feng Lu, Yahui Cheng, Genquan Han, Hong Dong
Summary: The quality of interface between III-V compound semiconductors and high k dielectrics is crucial for III-V semiconductor-based devices, with minimized interface oxide concentration desired for high quality interface. A thin layer of As metal on InAs can be oxidized in air after HCl treatment, with the AsOx reduced by ALD of high k dielectrics for clean-up effect. Optimizing air exposure time after HCl treatment for InAs substrate before ALD of Al2O3 can lead to high quality InAs based devices.
Article
Physics, Multidisciplinary
Ze Feng, Yitong Wang, Jilong Hao, Meiyi Jing, Feng Lu, Weihua Wang, Yahui Cheng, Shengkai Wang, Hui Liu, Hong Dong
Summary: This study successfully fabricated ion polarization dielectric of the LiPON-Al2O3 hybrid structure using atomic layer deposition, which exhibits a frequency-dependent high dielectric constant, providing a new strategy to engineers for modifying the gate oxide dielectric constant.
Article
Engineering, Electrical & Electronic
Eduardo Moctezuma-Pascual, Reydezel Torres-Torres
Summary: This study presents a parameter extraction methodology for the microwave behavior of MIM capacitors, experimentally validated up to 60 GHz with different total effective areas, and successfully determines the permittivity of the thin film dielectric by applying the model after removing the effects introduced by the test fixture.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
Abdulqader Mahmoud, Florin Ciubotaru, Frederic Vanderveken, Andrii Chumak, Said Hamdioui, Christoph Adelmann, Sorin Cotofana
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
Frederic Vanderveken, Hasnain Ahmad, Marc Heyns, Bart Soree, Christoph Adelmann, Florin Ciubotaru
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Engineering, Electrical & Electronic
Abdulqader Nael Mahmoud, Frederic Vanderveken, Christoph Adelmann, Florin Ciubotaru, Sorin Cotofana, Said Hamdioui
Summary: This study introduces a novel conversion-free SW gate cascading scheme that achieves SW amplitude normalization through a directional coupler, reducing energy consumption and enabling the design of simple circuits and SW multipliers. The results show that the proposed approach offers higher energy efficiency compared to conventional methods and 16nm CMOS designs.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2021)
Article
Physics, Applied
Gianluca Gubbiotti, Alexandr Sadovnikov, Evgeny Beginin, Sergey Nikitov, Danny Wan, Anshul Gupta, Shreya Kundu, Giacomo Talmelli, Robert Carpenter, Inge Asselberghs, Iuliana P. Radu, Christoph Adelmann, Florin Ciubotaru
Summary: This research investigates the characteristics of spin waves in vertical meander-shaped Co40Fe40B20 thin films using Brillouin-light-scattering spectroscopy. The study reveals the presence of frequency band gaps at specific wave numbers, which can be controlled by changing the geometrical parameters of the film.
PHYSICAL REVIEW APPLIED
(2021)
Article
Engineering, Electrical & Electronic
R. A. Izmailov, B. J. O'Sullivan, M. Popovici, J. A. Kittl, V. V. Afanas'ev
Summary: The study suggests using low temperature charge injection and thermally activated emission as a universal method for characterization of shallow traps in high permittivity insulating oxides. The volume concentration of these traps in all studied materials is found to be in the range of 1019-1020 cm-3, indicating that shallow trapping will significantly impact the performance of devices operating at low temperature and/or very short pulse times.
SOLID-STATE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
A. V. Chumak, P. Kabos, M. Wu, C. Abert, C. Adelmann, A. O. Adeyeye, J. Akerman, F. G. Aliev, A. Anane, A. Awad, C. H. Back, A. Barman, G. E. W. Bauer, M. Becherer, E. N. Beginin, V. A. S. V. Bittencourt, Y. M. Blanter, P. Bortolotti, I. Boventer, D. A. Bozhko, S. A. Bunyaev, J. J. Carmiggelt, R. R. Cheenikundil, F. Ciubotaru, S. Cotofana, G. Csaba, O. V. Dobrovolskiy, C. Dubs, M. Elyasi, K. G. Fripp, H. Fulara, I. A. Golovchanskiy, C. Gonzalez-Ballestero, P. Graczyk, D. Grundler, P. Gruszecki, G. Gubbiotti, K. Guslienko, A. Haldar, S. Hamdioui, R. Hertel, B. Hillebrands, T. Hioki, A. Houshang, C. -M. Hu, H. Huebl, M. Huth, E. Iacocca, M. B. Jungfleisch, G. N. Kakazei, A. Khitun, R. Khymyn, T. Kikkawa, M. Klaui, O. Klein, J. W. Klos, S. Knauer, S. Koraltan, M. Kostylev, M. Krawczyk, I. N. Krivorotov, V. V. Kruglyak, D. Lachance-Quirion, S. Ladak, R. Lebrun, Y. Li, M. Lindner, R. Macedo, S. Mayr, G. A. Melkov, S. Mieszczak, Y. Nakamura, H. T. Nembach, A. A. Nikitin, S. A. Nikitov, V. Novosad, J. A. Otalora, Y. Otani, A. Papp, B. Pigeau, P. Pirro, W. Porod, F. Porrati, H. Qin, B. Rana, T. Reimann, F. Riente, O. Romero-Isart, A. Ross, A. V. Sadovnikov, A. R. Safin, E. Saitoh, G. Schmidt, H. Schultheiss, K. Schultheiss, A. A. Serga, S. Sharma, J. M. Shaw, D. Suess, O. Surzhenko, K. Szulc, T. Taniguchi, M. Urbanek, K. Usami, A. B. Ustinov, T. van der Sar, S. van Dijken, V. I. Vasyuchka, R. Verba, S. Viola Kusminskiy, Q. Wang, M. Weides, M. Weiler, S. Wintz, S. P. Wolski, X. Zhang
Summary: Magnonics is a discipline that explores the physical properties of spin waves and utilizes them for data processing. It offers several advantages, such as scalability to atomic dimensions, operation in high-frequency ranges, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS technology. Although primarily in the academic domain, extensive research is being conducted to address the scientific and technological challenges, with several proof-of-concept prototypes already realized in laboratories.
IEEE TRANSACTIONS ON MAGNETICS
(2022)
Article
Materials Science, Multidisciplinary
A. Sadovnikov, G. Talmelli, G. Gubbiotti, E. N. Beginin, S. Sheshukova, S. A. Nikitov, C. Adelmann, F. Ciubotaru
Summary: The dependence of spin-wave excitation spectra on magnetic applied field in CoFeB meander-shaped films was experimentally studied through broadband ferromagnetic resonance measurements. Two different orientations of the external magnetic field were explored, with the vertical segments coupling the horizontal sections of the structure to support multiple magnetic modes.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Abdulqader Nael Mahmoud, Frederic Vanderveken, Florin Ciubotaru, Christoph Adelmann, Said Hamdioui, Sorin Cotofana
IEEE NANOTECHNOLOGY MAGAZINE
(2022)
Article
Physics, Applied
Moritz Geilen, Alexandra Nicoloiu, Daniele Narducci, Morteza Mohseni, Moritz Bechberger, Milan Ender, Florin Ciubotaru, Burkard Hillebrands, Alexandru Muller, Christoph Adelmann, Philipp Pirro
Summary: This study reports the resonant excitation of spin waves in micro-structured magnetic thin films by short-wavelength surface acoustic waves (SAWs), demonstrating the conservation and full transfer of energy and momentum from SAW to spin waves. These findings pave the way for miniaturized magneto-elastic spin-wave emitters for magnon computing.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Abdulqader Nael Mahmoud, Frederic Vanderveken, Florin Ciubotaru, Christoph Adelmann, Said Hamdioui, Sorin Cotofana
Summary: This paper introduces a novel paradigm of computing based on spin waves, which enables domain conversion free ultra-low energy consumption computing. The design of a non-binary spin wave adder is validated through micro-magnetic simulation and compared with conventional spin wave and 7nm CMOS designs. The results show that the proposed adder significantly reduces energy consumption and requires the least number of devices.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Physics, Applied
G. Gubbiotti, A. Sadovnikov, S. E. Sheshukova, E. Beginin, S. Nikitov, G. Talmelli, C. Adelmann, F. Ciubotaru
Summary: Studying the propagation of spin waves in 3D periodic structures has opened up new possibilities for connecting functional units in the magnonic circuitry. In this work, the researchers investigated the dependence of the magnonic band structure on the Ta spacer thickness in CoFeB/Ta/NiFe meander-shaped bilayers. Both propagating and stationary spin wave modes were observed. The frequency of the dispersive mode was found to slightly depend on the Ta spacer thickness, while the frequency position of the three stationary modes significantly increased with increasing Ta thickness. Micromagnetic calculations revealed that the stationary modes consisted of doublets with increasing frequency separation.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Kristof Moors, Kiroubanand Sankaran, Geoffrey Pourtois, Christoph Adelmann
Summary: The resistivity scaling of metals is a crucial limiting factor for the downscaling of interconnects in nanoelectronic devices. This study introduces a finite-temperature transport tensor to generalize the selection criterion for candidate metals with highly anisotropic Fermi surfaces, enabling the assessment of transport properties based on the temperature dependence of the tensor components.
PHYSICAL REVIEW MATERIALS
(2022)
Article
Computer Science, Information Systems
Abdulqader Mahmoud, Frederic Vanderveken, Florin Ciubotaru, Christoph Adelmann, Said Hamdioui, Sorin Cotofana
Summary: This paper presents an ultra-low energy Approximate Full Adder (AFA) and an Approximate 2-bit inputs Multiplier (AMUL). Micromagnetic simulations validate the functionality of the proposed designs. Results show that AFA and AMUL outperform existing implementations in terms of energy efficiency, error rate, and chip real-estate.
IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING
(2022)
Article
Engineering, Electrical & Electronic
Abdulqader Nael Mahmoud, Frederic Vanderveken, Christoph Adelmann, Florin Ciubotaru, Said Hamdioui, Sorin Cotofana
Summary: The article proposes a novel data parallel SW computing approach and verifies its optimization algorithm can reduce gate area. By comparing it with conventional SW gate implementations, it is found that reducing gate area comes at the expense of a slight delay increase without causing any increase in power consumption.
IEEE TRANSACTIONS ON MAGNETICS
(2021)
Article
Materials Science, Multidisciplinary
Frederic Vanderveken, Jeroen Mulkers, Jonathan Leliaert, Bartel Van Waeyenberge, Bart Soree, Odysseas Zografos, Florin Ciubotaru, Christoph Adelmann
Summary: The characteristics of confined magnetoelastic waves in nanoscale ferromagnetic magnetostrictive waveguides were investigated through a combination of analytical and numerical calculations. The coupling between confined spin waves and elastic Lamb waves was found to be a result of both magnetostriction and inverse magnetostriction. Numerical simulations were used to extract the dispersion relations and mode profiles of the magnetoelastic waves.
