4.6 Article

A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor

期刊

JOURNAL OF APPLIED PHYSICS
卷 111, 期 1, 页码 -

出版社

AIP Publishing
DOI: 10.1063/1.3673574

关键词

-

资金

  1. Engineering and Physical Sciences Research Council (EPSRC)
  2. Center for Process Innovation (CPI)
  3. Engineering and Physical Sciences Research Council [EP/H023666/1] Funding Source: researchfish
  4. EPSRC [EP/H023666/1] Funding Source: UKRI

向作者/读者索取更多资源

The leakage current characteristics of SrTiO3 MIM capacitors, fabricated using atomic layer deposition, are investigated. The characteristics are highly sensitive to the polarity and magnitude of applied voltage bias, punctuated by sharp increases at high field. The characteristics are also asymmetric with bias and the negative to positive current crossover point always occurs at a negative voltage bias. In this work, a model comprising thermionic field emission and tunneling phenomena is proposed to explain the dependence of leakage current upon the device parameters quantitatively. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3673574]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Materials Science, Multidisciplinary

Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films

Nikhil K. Ponon, Daniel J. R. Appleby, Erhan Arac, P. J. King, Srinivas Ganti, Kelvin S. K. Kwa, Anthony O'Neill

THIN SOLID FILMS (2015)

Article Nanoscience & Nanotechnology

Reliable fabrication of sub-10nm silicon nanowires by optical lithography

Sami Ramadan, Kelvin Kwa, Peter King, Anthony O'Neill

NANOTECHNOLOGY (2016)

Article Engineering, Manufacturing

Effect of crystallographic orientation and employment of different cutting tools on micro-end-milling of monocrystalline silicon

Zi Jie Choong, Dehong Huo, Patrick Degenaar, Anthony O'Neill

PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART B-JOURNAL OF ENGINEERING MANUFACTURE (2016)

Article Engineering, Electrical & Electronic

Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack

F. Arith, J. Urresti, K. Vasilevskiy, S. Olsen, N. Wright, A. O'Neill

IEEE ELECTRON DEVICE LETTERS (2018)

Article Physics, Applied

Improving metal/semiconductor conductivity using AlOx interlayers on n-type and p-type Si

P. J. King, E. Arac, S. Ganti, K. S. K. Kwa, N. Ponon, A. G. O'Neill

APPLIED PHYSICS LETTERS (2014)

Article Physics, Applied

Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects

G. H. Wells, T. Hopf, K. V. Vassilevski, E. Escobedo-Cousin, N. G. Wright, A. B. Horsfall, J. P. Goss, A. G. O'Neill, M. R. C. Hunt

APPLIED PHYSICS LETTERS (2014)

Article Physics, Applied

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

T. Hopf, K. V. Vassilevski, E. Escobedo-Cousin, P. J. King, N. G. Wright, A. G. O'Neill, A. B. Horsfall, J. P. Goss, G. H. Wells, M. R. C. Hunt

JOURNAL OF APPLIED PHYSICS (2014)

Article Physics, Applied

Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition

Daniel J. R. Appleby, Nikhil K. Ponon, Kelvin S. K. Kwa, Srinivas Ganti, Ullrich Hannemann, Peter K. Petrov, Neil M. Alford, Anthony O'Neill

JOURNAL OF APPLIED PHYSICS (2014)

Article Chemistry, Multidisciplinary

Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

Daniel J. R. Appleby, Nikhil K. Ponon, Kelvin S. K. Kwa, Bin Zou, Peter K. Petrov, Tianle Wang, Neil M. Alford, Anthony O'Neill

NANO LETTERS (2014)

Article Multidisciplinary Sciences

Mechanical Flexibility Reduces the Foreign Body Response to Long-Term Implanted Microelectrodes in Rabbit Cortex

Harbaljit S. Sohal, Gavin J. Clowry, Andrew Jackson, Anthony O'Neill, Stuart N. Baker

PLoS One (2016)

Article Engineering, Electrical & Electronic

Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack

J. Urresti, F. Arith, S. Olsen, N. Wright, A. O'Neill

IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

Article Engineering, Chemical

The effects of sulphur poisoning on the microstructure, composition and oxygen transport properties of perovskite membranes coated with nanoscale alumina layers

Guangru Zhang, Dragos Neagu, Peter J. King, Sami Ramadan, Anthony O'Neill, Ian S. Metcalfe

Summary: Perovskite oxides with mixed ionic and electronic conductivity are of interest for oxygen separation membranes, but they often degrade due to segregation and reaction with sulfur-based species in natural gas. Coating these membranes with Alumina layers by atomic layer deposition can delay or prevent degradation, with a critical coating thickness of around 30 nm showing no negative effect on O-2 transport flux and good flux recovery after H2S removal. Thinner coatings provide little protection against poisoning, while thicker coatings significantly decrease O-2 permeation fluxes.

JOURNAL OF MEMBRANE SCIENCE (2021)

Article Engineering, Electrical & Electronic

Facile technique for the removal of metal contamination from graphene

George H. Wells, Michael R. C. Hunt, Toby Hopf, Konstantin V. Vassilevski, Enrique Escobedo-Cousin, Alton B. Horsfall, Jonathan P. Goss, Anthony O'Neill

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)

Proceedings Paper Crystallography

Solid phase growth of graphene on silicon carbide by nickel silicidation: graphene formation mechanisms

Enrique Escobedo-Cousin, Konstantin Vassilevski, Toby Hopf, Nick Wright, Anthony O'Neill, Alton Horsfall, Jonathan Goss

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 (2014)

Proceedings Paper Crystallography

Optimizing the vacuum growth of epitaxial graphene on 6H-SiC

Toby Hopf, Konstantin Vassilevski, Enrique Escobedo-Cousin, Nick Wright, Anthony O'Neill, Alton Horsfall, Jonathan Goss, Anders Barlow, George Wells, Michael Hunt

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 (2014)

暂无数据