Article
Materials Science, Ceramics
Heecheol Shin, Hyobin Choi, Jaeseong Lim, Wanggon Lee, Kumar Mohit, Younsoo Kim, Hyung-Suk Jung, Hanjin Lim, Hyungtak Seo
Summary: The shrinkage and leakage current suppression of MIM capacitors are crucial for maintaining desired charge storage and retention levels in DRAM. This study uses ARXPS, SE, and temperature dependent I-V analysis to analyze a ZrO2-based dielectric film and its interface with a TiO2/Al2O3 buffer layer, demonstrating the importance of the buffer layer in controlling leakage current.
JOURNAL OF ASIAN CERAMIC SOCIETIES
(2022)
Article
Chemistry, Physical
A. M. Mumlyakov, M. Shibalov, I. Trofimov, M. G. Verkholetov, A. P. Orlov, G. D. Diudbin, S. A. Evlashin, P. A. Nekludova, Yu Anufriev, A. M. Tagachenkov, E. Zenova, M. A. Tarkhov
Summary: This study investigated the dielectric properties of HfOx, AlOx, TaOx, and HfAlTaOx thin films, as well as their application in MIM capacitors. The HfAlTaOx compound showed significantly higher dielectric strength compared to other dielectric materials.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Hao Yu, Jue Wang, Li Liu, Kuang Sheng
Summary: In this study, a metal-insulator-metal (MIM) capacitor with Al2O3 dielectric layer and TiN electrodes was fabricated using magnetron sputtering technology. The capacitor exhibited very low leakage current density and excellent voltage linearity, making it a promising candidate for power integrated circuits application.
SOLID-STATE ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Kirill Kamnev, Marcela Sepulveda, Maria Bendova, Zdenek Pytlicek, Jan Prasek, Eva Kolibalova, Jan Michalicka, Alexander Mozalev
Summary: An aluminum-on-zirconium bilayer is anodized in oxalic acid solution to create porous anodic alumina (PAA) and ZrO2 nanocolumns. By adjusting the re-anodizing voltage, the thickness of the nanostructured oxide and bottom oxide can be linearly increased, with a unique design of the bottom oxide for ideal dielectric performance.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Pramod Narayan Tripathi, Sanjeev Kumar Ojha, Alexey Nazarov
Summary: The study investigated the impact of PEALD-Al2O3 buffer layer on the electrical and ferroelectric characteristics of MFIS gate stack, showing its potential application in internet of things. Different capacitor structures were fabricated, with MFI(10 nm)S structure demonstrating excellent data retention, fatigue resistance, and breakdown characteristics, making it a promising candidate for FeFET gate stack.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Materials Science, Ceramics
Ahmad Hussain, Nawishta Jabeen, Najam Ul Hassan, Waqar Hussain, Muhammad Adnan Qaiser, Shaukat Khan, Ahmed M. Hassan, Asma A. Alothman, Nada A. Almuhous, P. Rosaiah, Maduru Suneetha, Muhammad Sufyan Javed
Summary: This study engineered two high-entropy ceramic materials and analyzed their structural, ferroelectric, and dielectric capacitive performances. These high-entropy ceramics exhibit excellent performance even at high temperatures, making them significant for temperature-dependent energy storage applications.
CERAMICS INTERNATIONAL
(2023)
Article
Materials Science, Multidisciplinary
Abdullah Alodhayb, Azat Meredov, Parul Dawar
Summary: There is a growing demand for clean and inexpensive energy sources for sustainable growth, however, depletion of fossil fuels and fluctuating oil prices have led to an increased demand for clean energy. Researchers are now seeking alternative sources of renewable energy, with Infrared (IR) energy harvesting being considered a promising contribution to fulfilling this demand.
MATERIALS RESEARCH EXPRESS
(2021)
Article
Materials Science, Multidisciplinary
Aslihan Kartci, Silvester Vancik, Jan Prasek, Radim Hrdy, Michael Schneider, Ulrich Schmid, Jaromir Hubalek
Summary: In this study, on-chip MIS capacitors based on HfO2/Al2O3 stack dielectric were fabricated using atomic layer deposition processes on a silicon wafer. The properties of the capacitors, including capacitance density, C-V, J-V, impedance characteristics, equivalent dielectric constant, breakdown voltage, and leakage current, were investigated. The experimental results showed very low leakage current and good breakdown voltage.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Crystallography
Raz Muhammad, Asif Ali, Javier Camargo, Miriam S. Castro, Wen Lei, Kaixin Song, Dawei Wang
Summary: In this study, 0.5BaTiO(3)-(0.5 - x)BiMg1/2Ti1/2O3-xNaNbO(3) ceramics were prepared via conventional solid state sintering route, and it was found that the addition of NaNbO3 improved the dielectric properties. At x = 0.25, the ceramics exhibited high relative permittivity and recoverable energy density, making them suitable for X9R MLCC applications.
Article
Engineering, Electrical & Electronic
Hung-Yu Chen, Po- Shih, Washim Reza Ali, Ming-Huang Li, Sheng-Shian Li
Summary: This work presents a new platform for designing microelectromechanical system (MEMS) capacitive transducers with multiple transduction gaps. The proposed platform is based on traditional CMOS technology, allowing for excellent circuit integration capability. By utilizing a partial etching technique and anti-reflective coating, transduction gap spacing of 125 nm, 400 nm, and 930 nm can be fabricated simultaneously without damaging the circuit. The platform is validated through the fabrication of capacitive resonators and demonstrated the feasibility of using different transduction gaps in a dual-gap capacitive micromachined ultrasonic transducer (CMUT) array.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2023)
Article
Chemistry, Physical
G. R. Berdiyorov, H. Hamoudi
Summary: By utilizing density functional theory and nonequilibrium Green's functional formalism, this study investigated the impact of an insulating layer on the current rectification properties of the CNT-HfO2-Au junction. The research found that the rectification ratio and nonlinearity increased linearly with the layer thickness, while differential resistance increased exponentially. These findings could be beneficial for developing CNT-based diodes with desired performance metrics for various optoelectronic applications.
SURFACES AND INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
W. Zhu, Q. Cui, M. L. Adam, Z. Liu, L. Zhang, Z. Dai, Y. Yin, S. Chen, L. Song
Summary: The VOCl single crystal has a high dielectric constant of up to 11.7, making it suitable as a gate dielectric layer in MoSe2 FETs to ensure gate capacitance and low leakage current. The MoSe2 FET with VOCl dielectric shows a significant decrease in subthreshold swing and a low trap density at the interface, highlighting the high potential of VOCl as a two-dimensional gate dielectric.
Article
Chemistry, Multidisciplinary
Yazhi Xu, Xudong Wang, Wei Zhang, Lisa Schaefer, Johannes Reindl, Felix vom Bruch, Yuxing Zhou, Valentin Evang, Jiang-Jing Wang, Volker L. Deringer, En Ma, Matthias Wuttig, Riccardo Mazzarello
Summary: The degree of disorder in chalcogenide phase-change materials is crucial for nonvolatile memory devices and neuro-inspired computing. By combining ab initio simulations and transport experiments, the study extends these concepts to various chalcogenides, providing a wider range of compositions with tunable properties for demanding phase-change applications.
ADVANCED MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Bolun Zhang, Zhenxing Li, Zhengda Hu, Junjie Zhang, Jicheng Wang
Summary: The study introduces a bidirectional metamaterial perfect absorber with the ability to switch between ultra-wideband and dual-narrowband absorption, achieving high absorptivity over a wide spectral range. Simulation results validate its unique properties and potential applications in optical technologies like energy harvesting and thermal emission.
RESULTS IN PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Sukhrob Abdulazhanov, Maximilian Lederer, David Lehninger, Clemens Mart, Tarek Ali, Defu Wang, Ricardo Olivo, Jennifer Emara, Thomas Kampfe, Gerald Gerlach
Summary: This article presents the capacitance-voltage (C-V) characteristics of HfxZr1-xO2 metal-ferroelectric-metal (MFM) thin-film capacitors with various Zr doping, thicknesses, and annealing temperatures. The influence of doping, electric field cycling, and annealing temperature on tuning characteristics (tunability) was analyzed and an optimized bias region for the maximum tunability was defined. The specific C-V behavior of both ferroelectric and antiferroelectric-like (AFE) phases was discussed, highlighting the trade-off between bias range and tunability for varactor applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
R. K. Katiyar, Y. Sharma, D. Barrionuevo, S. Kooriyattil, S. P. Pavunny, J. S. Young, G. Morell, B. R. Weiner, R. S. Katiyar, J. F. Scott
APPLIED PHYSICS LETTERS
(2015)
Article
Physics, Applied
Shojan P. Pavunny, Yogesh Sharma, Sudheendran Kooriyattil, Sita Dugu, Rajesh K. Katiyar, James F. Scott, Ram S. Katiyar
APPLIED PHYSICS LETTERS
(2015)
Article
Physics, Applied
Shalini Kumari, N. Ortega, A. Kumar, S. P. Pavunny, J. W. Hubbard, C. Rinaldi, G. Srinivasan, J. F. Scott, Ram S. Katiyar
JOURNAL OF APPLIED PHYSICS
(2015)
Article
Physics, Applied
Yogesh Sharma, Shojan P. Pavunny, Esteban Fachini, James F. Scott, Ram S. Katiyar
JOURNAL OF APPLIED PHYSICS
(2015)
Article
Physics, Applied
Sita Dugu, Shojan P. Pavunny, Yogesh Sharma, James F. Scott, Ram S. Katiyar
JOURNAL OF APPLIED PHYSICS
(2015)
Article
Nanoscience & Nanotechnology
Rajesh K. Katiyar, Yogesh Sharma, Danilo G. Barrionuevo Diestra, Pankaj Misra, Sudheendran Kooriyattil, Shojan P. Pavunny, Gerardo Morell, Brad R. Weiner, J. F. Scott, Ram S. Katiyar
Article
Physics, Applied
Mohan K. Bhattarai, Shojan P. Pavunny, Alvaro A. Instan, James F. Scott, Ram S. Katiyar
JOURNAL OF APPLIED PHYSICS
(2017)
Article
Nanoscience & Nanotechnology
Sita Dugu, Shojan P. Pavunny, Tej B. Limbu, Brad R. Weiner, Gerardo Morell, Ram S. Katiyar
Article
Physics, Applied
S. P. Pavunny, R. Thomas, A. Kumar, E. Fachini, R. S. Katiyar
JOURNAL OF APPLIED PHYSICS
(2012)
Article
Materials Science, Multidisciplinary
S. P. Pavunny, R. Thomas, A. Kumar, J. F. Scott, R. S. Katiyar
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2012)
Article
Chemistry, Physical
Jimmy C. Kotsakidis, Antonija Grubisic-Cabo, Yuefeng Yin, Anton Tadich, Rachael L. Myers-Ward, Matthew DeJarld, Shojan P. Pavunny, Marc Currie, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Nikhil Medhekar, D. Kurt Gaskill, Amadeo L. Vazquez de Parga, Michael S. Fuhrer
CHEMISTRY OF MATERIALS
(2020)
Article
Physics, Applied
Mohan K. Bhattarai, Shojan P. Pavunny, Ram S. Katiyar
Summary: A systematic study was conducted on La3+ and Sc3+ doped lead zirconate titanate ceramics with variations in composition, revealing optimized performance at specific doping ratios for ferroelectric memory and energy-storage applications.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Alvaro A. Instan, Shojan P. Pavunny, Mohan K. Bhattarai, Ram S. Katiyar
APPLIED PHYSICS LETTERS
(2017)
Article
Physics, Applied
Yogesh Sharma, Satyaprakash Sahoo, A. K. Mishra, Pankaj Misra, Shojan P. Pavunny, Abhilash Dwivedi, S. M. Sharma, Ram S. Katiyar
JOURNAL OF APPLIED PHYSICS
(2015)