Article
Physics, Condensed Matter
U. Chaitra, A. V. Muhammed Ali, M. G. Mahesha, Akshayakumar Kompa, Dhananjaya Kekuda, K. Mohan Rao
Summary: This study investigates the structural, optical and electrical properties of pristine and aluminium doped zinc oxide thin films deposited on fluorine doped tin oxide coated glass substrates using sol-gel spin coating technique. The effect of doping on the performance of Au/AZO/FTO Schottky diode was analyzed through I-V characterization, with parameters such as Schottky barrier height, ideality factor and series resistance determined to depend on doping concentration. Devices with undoped and 6 at% aluminium doped ZnO thin films showed better rectification performance.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Energy & Fuels
M. F. Al-Kuhaili
Summary: This study demonstrates the improvement of CdTe thin films by doping with samarium, resulting in changes in material type, decreased resistivity, formation of ohmic contacts, and enhanced absorption of solar radiation due to a reduced optical bandgap.
Article
Engineering, Electrical & Electronic
P. Harishsenthil, J. Chandrasekaran, R. Marnadu, V Balasubramani
Summary: In this study, Zn@HfO2 nanorods with different zinc concentrations were prepared through the JNSP technique to improve the performance of the MIS Schottky diode Al/Zn-HfO2/n-Si. Various characterization methods were used to analyze the structure, morphology, and chemical composition of the films, showing that the incorporation of zinc ions significantly improved the diode performance.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Engineering, Electrical & Electronic
Sanjib Mondal, Anupam Ghosh, Shyam Murli Manohar Dhar Dwivedi, Avijit Dalal, Aniruddha Mondal
Summary: The high-temperature current conduction properties of Au/TiO2/p-Si and Au/Er: TiO2/p-Si Schottky barrier diodes were analyzed. Increasing temperature led to an increase in barrier height and a decrease in ideality factor and series resistance. The use of Richardson plot and Gaussian distribution analysis revealed important parameters and indicated a reduction in barrier inhomogeneity.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Materials Science, Ceramics
M. Chakraborty, E. S. Kadir, R. N. Gayen
Summary: By varying the graphene oxide (GO) content, the modification of UV photo-response characteristics in transparent titanium dioxide-graphene oxide (TiO2-GO) nanocomposite thin films was studied. The presence of GO improves the optical band gap of TiO2 without affecting its transparency. The fabricated metal-semiconductor (MS) Schottky junctions with TiO2-GO nanocomposite thin films show rectifying behavior and improved UV response characteristics.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Multidisciplinary
Lingyu Meng, A. F. M. Anhar Uddin Bhuiyan, Dong Su Yu, Hsien Lien Huang, Jinwoo Hwang, Hongping Zhao
Summary: In this study, the epitaxial growth of (010) beta-Ga2O3 and beta-(AlxGa1-x)(2)O-3 films using MOCVD was investigated. Pyramid-shaped defects were observed in the beta-Ga2O3 films, but the surface morphology and defect formation were improved by adding a small amount of aluminum (Al). This approach effectively optimized the surface morphology of thick beta-(AlxGa1-x)(2)O-3 films with rapid growth rates. The importance of this work is rated 7 out of 10.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Physics, Applied
Z. P. Wang, H. H. Gong, X. X. Yu, T. C. Hu, X. L. Ji, F. -F. Ren, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye
Summary: This study investigates the relationship between trap inhomogeneity within beta-Ga2O3 and the conversion of Shockley-Read-Hall (SRH) recombination in NiO/beta-Ga2O3 p(+)-n heterojunction diodes. The analysis identifies near-surface traps E2 and E3, as well as bulk traps E2*, and shows that carrier transport under forward bias is mainly governed by trap-assisted tunneling through the E3 traps with high recombination rates. The elimination of near-surface traps leads to improved diode performance and enables the development of high-performance power rectifiers.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, Makoto Kasu
Summary: Line-shaped defects were observed in halide vapor-phase epitaxial (001) beta-Ga2O3 SBDs, and these defects were found to be related to the reverse leakage current. Atomic force microscopy observation and simulation results showed that the formation of line-shaped defects originated from a dislocation network near the crystal surface.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Tamer Guzel, Andac Batur Colak
Summary: In this study, an artificial neural network (ANN) model was developed to predict the capacitance values of the polymer-interface 6H-SiC/MEH-PPV/Al Schottky diode based on frequency. The model was trained using 480 experimental data points and compared with experimental data. Results showed that the ANN model had good predictive performance.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Physical
Ali Baltakesmez, Betul Guezeldir
Summary: In this study, the effect of chlorine doping on GUAPbI3-xClx perovskite film formation and device applications was investigated. The results showed that chlorine doping improved the structure and performance of GUAPbI3-xClx perovskite film. The MIS and FET devices fabricated using GUAPbI3-xClx showed promising performance parameters, indicating the potential application of chlorine-doped perovskite materials in optoelectronic devices.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Physical
Qihao Zhang, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu
Summary: High-performance beta-Ga2O3-based Schottky barrier diodes (SBDs) and metal-semiconductor field-effect transistors (MESFETs) were fabricated on a highly doped epitaxial wafer. The electrical properties and stabilities of these devices after annealing were investigated. The results showed excellent ON/OFF ratios for all SBDs, and the MESFETs exhibited pinch-off and saturation characteristics with high drain currents, surpassing previous reports. The study provides valuable insights for the development of practical applications of beta-Ga2O3-based electronic devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Physics, Multidisciplinary
Hao Guo-Qiang, Zhang Rui, Zhang Wen-Jing, Chen Na, Ye Xiao-Jun, Li Hong-Bo
Summary: Graphene-based heterostructures have great potential for device scaling, but achieving low Schottky barrier is a challenge. This study investigates the effects of asymmetric O doping on the electronic properties and Schottky barrier of graphene/MoSe2 heterostructure. The results show that the type and height of the Schottky barrier can be controlled by changing the concentration and sites of the O dopant.
ACTA PHYSICA SINICA
(2022)
Article
Materials Science, Ceramics
Prashant Thapliyal, Alok S. Kandari, Vijendra Lingwal, N. S. Panwar, G. Mohan Rao
Summary: The study investigated the characteristics of (Ta2O5)1-x- (TiO2)x (TTOx) thin films prepared with different compositions and annealing temperatures, revealing that the film with x = 0.06 and annealed at 700°C exhibited the highest dielectric constant and lower leakage current density, making it suitable for high-density silicon memory devices.
CERAMICS INTERNATIONAL
(2021)
Article
Materials Science, Ceramics
A. Panneerselvam, K. S. Mohan, R. Marnadu, J. Chandrasekaran
Summary: The study investigates the fabrication of metal-insulator-semiconductor Schottky barrier diodes with rare earth metal oxide Yb2O3 thin films as insulators using low-cost jet nebulizer spray pyrolysis technique. Various characterization techniques were used to analyze the structural, morphological, and opto-electrical properties of the Yb2O3 thin films. The experimental results show that the SBD fabricated at 550 degrees C exhibits good performance and is suitable for thermal dependent electronic device applications.
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
H. H. Gullu, D. E. Yildiz
Summary: In this study, the electrical properties of the Al/TiO2/p-Si diode structure with an atomic layer deposited TiO2 interface layer were investigated using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements. The study found a rectifying behavior correlated with frequency and bias voltage, and revealed the impact of interface charge carriers on the capacitive response. Detailed information on electronic parameters and dielectric responses was obtained over a wide frequency range.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Physical
Young Geun Song, In-Hwan Baek, Jae-Gyun Yim, Taeyong Eom, Taek-Mo Chung, Chul-Ho Lee, Cheol Seong Hwang, Chong-Yun Kang, Seong Keun Kim
Summary: This study presents a highly sensitive NO2 gas sensor composed of cross-linked p-type SnS nanoplates on SiO2 nanorods, with area-selective growth of SnS by atomic layer deposition allowing for enhanced gas response of p-type semiconductor sensors without the need for additional patterning.
JOURNAL OF MATERIALS CHEMISTRY A
(2022)
Article
Materials Science, Multidisciplinary
Jenam Kim, Young Uk Ryu, Ae Jin Lee, Ye Won Kim, Ji Hyeon Hwang, Youngjin Kim, Hansol Oh, YongJoo Park, Woojin Jeon
Summary: This study investigates the deposition of homogeneous ZrxHf(1-x)O2 thin films using a mixed precursor mixture by atomic layer deposition (ALD) and explores their electrical properties. It is found that the mixed structures of ZrO2/HfO2 thin films deposited by ALD remain inhomogeneous even after annealing, resulting in part of the HfO2 remaining in the monoclinic phase and reducing the dielectric constant. The study also discovers that ZrxHf1-xO2 thin films prepared using CpZr and CpHf precursors exhibit enhanced electrical properties.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Nahid Sultan Al-Mamun, Douglas E. Wolfe, Aman Haque, Jae-Gyun Yim, Seong Keun Kim
Summary: A room temperature annealing method using electron impulse force is demonstrated to significantly improve the crystallinity and reduce the resistivity of tin disulfide, which is important for post-synthesis annealing applications that require high temperature and special environments.
SCRIPTA MATERIALIA
(2023)
Article
Nanoscience & Nanotechnology
Jaegyun Yim, Hong Keun Chung, Seung Ho Ryu, Han Kim, Sung Ok Won, Taeyong Eom, Taek-Mo Chung, Seong Keun Kim
Summary: This study demonstrates the area-selective atomic layer deposition (ALD) of SnS2 on SiO2 and Al2O3 surfaces. By optimizing the super-cycle conditions, selective SnS2 deposition of approximately 7 nm thickness was achieved on both SiO2 and Al2O3. This method contributes to the improvement of area-selective deposition technology for BEOL-compatible transistors.
ACS APPLIED NANO MATERIALS
(2023)
Article
Physics, Applied
Jihoon Jeon, Song-Hyeon Kuk, Ah-Jin Cho, Seung-Hyub Baek, Sang-Hyeon Kim, Seong Keun Kim
Summary: We have fabricated n-type ferroelectric field-effect transistors (FeFETs) using atomic-layer-deposited HfZrOx (HZO) films with a large memory window (MW) immediately after the write operation. Charge trapping at the HZO/Si interface in FeFETs is identified as the main cause of memory window reduction. By controlling the properties of the interfacial layer through varying the O-3 injection time during atomic layer deposition, the FeFETs based on HZO (long O-3 of 7 s) exhibit a larger MW (2.1 V) compared to the FeFETs based on HZO (short O-3 of 0.3 s) (0.9 V). Pulsed I-V measurements confirm that the FeFETs based on HZO (long O-3 of 7 s) show a large MW of 1.0 V with an extremely short delay time of 100 ns between pulses. The improvement in the performance of HZO-based FeFETs suggests a reduction in trap density in the interfacial layer by using a long O-3 injection time.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Dong Hee Han, Ae Jin Lee, Min Kyeong Nam, Seungwoo Lee, Su Jin Choi, Youngjin Kim, Taehwan Moon, Woojin Jeon
Summary: The ferroelectric properties of Hf0.5Zr0.5O2(HZO) were investigated based on the preferred orientations of the titanium nitride (TiN) bottom electrode (BE). (111) and (200)-oriented TiN were used as BEs. The difference in crystallinity of HZO was observed and its electrical properties were compared. Through various crystal structure analyses and electrical measurements, it was found that the HZO thin film grown on TiN(200) had more ferroelectric non-centrosymmetric orthorhombic phase in the pristine state due to the local epitaxial relation between TiN(200) and HZO.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
Sung-Jin Jung, Sang-Soon Lim, Byeong-Hyeon Lee, Sung Ok Won, Hyung-Ho Park, Seong Keun Kim, Jin-Sang Kim, Seung-Hyub Baek
Summary: Solid compounds with volatile elements often deviate from stoichiometric composition during thermal processes, leading to varied properties. Understanding the effect of process parameters on element volatility and how physical properties change with altered stoichiometry is crucial.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Myeong Gil Chae, Jina Kim, Hee Won Jang, Bo Keun Park, Taek-Mo Chung, Seong Keun Kim, Jeong Hwan Han
Summary: High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were achieved by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at 225 degrees C exhibited excellent crystallinity and dense, smooth surfaces, resulting in superior field-effect mobility of 6.13-7.24 cm2/V·s without requiring high-temperature post-annealing. Optimization of the SnO channel thickness suppressed off-state leakage current and yielded excellent TFT switching performance with an Ion/Ioff value of 104-105. ALD Al2O3 film backchannel passivation improved subthreshold swing characteristics by reducing surface defect states, highlighting the importance of synergistic control of microstructure, surface morphology, and thickness in ALD SnO channels for high-performance p-type SnO TFTs.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Seung Ho Ryu, Jihoon Jeon, Gwang Min Park, Taikyu Kim, Taeyong Eom, Taek-Mo Chung, In-Hwan Baek, Seong Keun Kim
Summary: In this study, the researchers enhanced the performance of p-type SnO thin-film transistors (TFTs) by using an atomic-layer-deposited SnO/high-k structure with crystalline HfO2 as a high-k dielectric. The introduction of an ultrathin Al2O3 layer on the surface of c-HfO2 effectively eliminated grain boundaries and improved the electrical performance of the TFTs. This finding suggests the potential of combining van der Waals semiconductors with high-k dielectrics for advanced device applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Ceramics
Seunghyeok Lee, Sung-Jin Jung, Gwang Min Park, Junpyo Hong, Albert S. Lee, Seung-Hyub Baek, Heesuk Kim, Tae Joo Park, Jin-Sang Kim, Seong Keun Kim
Summary: This study demonstrates the use of atomic layer deposition (ALD) to create a thin Al2O3 layer on n-type Bi2Te2.7Se0.3, which helps improve their thermoelectric performance by reducing the adverse effects of multiple boundaries. The ALD cycle effectively suppresses volatilization and reduces the electron concentration while inducing numerous boundaries to decrease thermal conductivity. However, increasing the number of ALD cycles leads to a rise in resistance and degradation of performance. Overall, the ZT value is increased by 51% with a single ALD cycle.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2023)
Article
Nanoscience & Nanotechnology
Min Gye Kim, Nam-Kwang Cho, Jin Hyun Ma, Min Ho Park, Jeong Hyeon Park, Woojin Jeon, Seong Jun Kang
Summary: We have developed a promising deposition method for fabricating controllable layer-by-layer (LbL) quantum-dot (QD) structures. By utilizing a spray coating method, we were able to induce desired properties of QD thin films and control the thickness of QD layers. The application of an intermediate heat treatment between spray pass cycles successfully prevented cluster formation on the spray-coated QD films, resulting in the LbL structure of Sr-QDs with fewer surface defects and improved crystallinity, ultimately leading to enhanced performance of optoelectronic devices.
ACS APPLIED NANO MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Jeong Hyeon Park, Ye Won Kim, Myeong Ho Kim, Jin-Sik Kim, Woojin Jeon
Summary: In this study, we developed a Mometal thin film deposition process using two steps: Mo2N thin film deposition through plasma-enhanced atomic layer deposition, followed by rapid thermal annealing. The mechanism of Mo2N reduction during post-deposition annealing was investigated. Agglomeration during the reduction process was successfully prevented by employing a hydrogen-permeable mechanical capping layer. Eventually, a low-resistance Mo thin film formation process was achieved, even at a thickness of 5 nm.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Jun Hyung Jeong, Min Ho Park, Hanseok Jeong, Wonsik Kim, Soohyung Park, Woojin Jeon, Seong Jun Kang
Summary: Inspired by the human visual system, optoelectronic synaptic transistors have gained attention as promising candidates for next-generation neuromorphic computing systems. In order to achieve low-cost, mass production, devices need to be fabricated through a solution process. Researchers have successfully improved the photoresponse characteristics and electrical characteristics of optoelectronic synaptic transistors by introducing an indium gallium zinc oxide-based transistor doped with cadmium.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Ae Jin Lee, Seungwoo Lee, Dong Hee Han, Youngjin Kim, Woojin Jeon
Summary: In this study, the discrete feeding method (DFM) in atomic layer deposition (ALD) was used to prevent interfacial layer formation between electrodes and insulators. The results showed that DFM significantly improved precursors' chemisorption efficiency, growth rate, and reduced deposition time in ALD. By applying DFM to the deposition of ZrO2, interfacial layer formation was prevented. These findings provide new insights into interfacial layer formation and have implications for the development of electronic devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Materials Science, Multidisciplinary
Ah-Jin Cho, Seung Ho Ryu, Jae Gyun Yim, In-Hwan Baek, Jung Joon Pyeon, Sung Ok Won, Seung-Hyub Baek, Chong-Yun Kang, Seong Keun Kim
Summary: Atomic layer deposition (ALD) is a promising growth technique for TMDCs, but the poor crystallinity of ALD-grown TMDCs remains a challenge. This study investigates the growth behavior of highly crystallized MoS2 by ALD, finding that the ALD process facilitates repeated growth and saturation, leading to improved TMDC quality.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)