Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics

(2018) Ao Liu et al.   ADVANCED MATERIALS

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

(2018) Man Hoi Wong et al.   Applied Physics Express

Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

(2018) Chandan Joishi et al.   Applied Physics Express

On the feasibility of p-type Ga2O3

(2018) Alexandros Kyrtsos et al.   APPLIED PHYSICS LETTERS

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

(2018) Jinho Bae et al.   APPLIED PHYSICS LETTERS

Structure and vibrational properties of the dominant O-H center in β-Ga2O3

(2018) Philip Weiser et al.   APPLIED PHYSICS LETTERS

Structural and electronic properties of Ga2O3-Al2O3 alloys

(2018) Hartwin Peelaers et al.   APPLIED PHYSICS LETTERS

Iron and intrinsic deep level states in Ga2O3

(2018) M. E. Ingebrigtsen et al.   APPLIED PHYSICS LETTERS

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Guest Editorial: The dawn of gallium oxide microelectronics

(2018) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics *These authors contributed equally to this work.

(2018) Qiming He et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

(2018) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

(2018) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

Charge Trapping in Al2O3/ $\beta$ -Ga2O3-Based MOS Capacitors

(2018) Maruf A. Bhuiyan et al.   IEEE ELECTRON DEVICE LETTERS

Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates

(2018) Jiancheng Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates

(2018) Houqiang Fu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-Event Burnout Mechanisms in SiC Power MOSFETs

(2018) Arthur F. Witulski et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

A 10kW Solar-Powered Bidirectional EV Charger Compatible with Chademo and COMBO

(2018) Gautham Ram Chandra Mouli et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs

(2018) Qing Hao et al.   INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

(2018) Kentaro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effects of fluorine incorporation into β-Ga2O3

(2018) Jiangcheng Yang et al.   JOURNAL OF APPLIED PHYSICS

Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current

(2018) E. B. Yakimov et al.   JOURNAL OF APPLIED PHYSICS

Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra

(2018) Michael Stavola et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in the growth of β-Ga 2 O 3 for power electronics applications

(2018) Michele Baldini et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Current status and perspectives of ultrahigh-voltage SiC power devices

(2018) T. Kimoto et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Recent advances in diamond power semiconductor devices

(2018) Hitoshi Umezawa   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A survey of acceptor dopants for β-Ga2O3

(2018) John L Lyons   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

(2018) Jiancheng Yang et al.   AIP Advances

2300V Reverse Breakdown Voltage Ga 2 O 3 Schottky Rectifiers

(2018) Jiancheng Yang et al.   ECS Journal of Solid State Science and Technology

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Design consideration of high voltage Ga 2 O 3 vertical Schottky barrier diode with field plate

(2018) J.-H. Choi et al.   Results in Physics

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

(2018) Yao Yao et al.   Materials Research Letters

Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

(2018) Janghyuk Kim et al.   ACS Applied Materials & Interfaces

Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3

(2018) Jacob R. Ritter et al.   APPLIED PHYSICS LETTERS

Acceptor doping of β-Ga2O3 by Mg and N ion implantations

(2018) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Donors and deep acceptors in β-Ga2O3

(2018) Adam T. Neal et al.   APPLIED PHYSICS LETTERS

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

(2018) Zongyang Hu et al.   APPLIED PHYSICS LETTERS

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

(2018) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

(2018) Manikant Singh et al.   IEEE ELECTRON DEVICE LETTERS

Ultraviolet Light-based Current-Voltage Method for Simultaneous Extraction of Donor-and Acceptor-like Interface Traps in β-Ga2O3 FETs

(2018) Hagyoul Bae et al.   IEEE ELECTRON DEVICE LETTERS

Impact ionization in β-Ga2O3

(2018) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

(2018) HuiWen Xue et al.   Nanoscale Research Letters

Stacking faults in β-Ga2O3 crystals observed by X-ray topography

(2018) Hirotaka Yamaguchi et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

(2017) Neil Moser et al.   IEEE ELECTRON DEVICE LETTERS

Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

(2017) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

(2017) Philip G. Neudeck et al.   IEEE ELECTRON DEVICE LETTERS

High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

(2017) Jiancheng Yang et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

(2017) T. Paul Chow et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

(2017) Daisuke Tahara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3

(2017) Patrick H. Carey et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on $(\bar{2}01)$ β-Ga2O3

(2017) Makoto Kasu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

(2017) Takayoshi Oshima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ab initio velocity-field curves in monoclinic β-Ga2O3

(2017) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Self-trapped holes in β-Ga2O3 crystals

(2017) B. E. Kananen et al.   JOURNAL OF APPLIED PHYSICS

Fast growth rate of epitaxial β–Ga 2 O 3 by close coupled showerhead MOCVD

(2017) Fikadu Alema et al.   JOURNAL OF CRYSTAL GROWTH

Epitaxial growth of α-Ga 2 O 3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe 2 O 3 buffer layers

(2017) Hiroyuki Nishinaka et al.   MATERIALS LETTERS

Development of GaN substrate with a large diameter and small orientation deviation

(2017) Takehiro Yoshida et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

(2017) Alex Q. Huang   PROCEEDINGS OF THE IEEE

Band alignment of Al 2 O 3 with (−201) β-Ga 2 O 3

(2017) Patrick H. Carey et al.   VACUUM

Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga 2 O 3 Micro-Flake

(2017) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

(2017) Munho Kim et al.   Journal of Materials Chemistry C

High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

(2017) Sooyeoun Oh et al.   ACS Photonics

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Recent Development of Boron Nitride towards Electronic Applications

(2017) Natalia Izyumskaya et al.   Advanced Electronic Materials

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®

(2016) Masaya Oda et al.   Applied Physics Express

All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

(2016) Yoshihiro Kokubun et al.   Applied Physics Express

An AlN/Al0.85Ga0.15N high electron mobility transistor

(2016) Albert G. Baca et al.   APPLIED PHYSICS LETTERS

Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals

(2016) T. Onuma et al.   APPLIED PHYSICS LETTERS

Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

(2016) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

(2016) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

(2016) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

Single crystal CVD diamond membranes for betavoltaic cells

(2016) C. Delfaure et al.   APPLIED PHYSICS LETTERS

Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

(2016) Patrick Vogt et al.   APPLIED PHYSICS LETTERS

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

(2016) Subrina Rafique et al.   APPLIED PHYSICS LETTERS

Truly Transparent p-Type γ-CuI Thin Films with High Hole Mobility

(2016) Naoomi Yamada et al.   CHEMISTRY OF MATERIALS

Interface State Density in Atomic Layer Deposited SiO2/ $\beta $ -Ga2O3( $\bar {2}01$ ) MOSCAPs

(2016) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Vertical GaN Power Diodes With a Bilayer Edge Termination

(2016) Jeramy R. Dickerson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

(2016) Francesco Mezzadri et al.   INORGANIC CHEMISTRY

Epitaxially grown crystalline Al2O3interlayer on β-Ga2O3(010) and its suppressed interface state density

(2016) Takafumi Kamimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Origins of etch pits in β-Ga2O3(010) single crystals

(2016) Kenji Hanada et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Structural evaluation of defects in β-Ga2O3single crystals grown by edge-defined film-fed growth process

(2016) Osamu Ueda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Relationship between crystal defects and leakage current in β-Ga2O3Schottky barrier diodes

(2016) Makoto Kasu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Catalytic growth and characterization of single crystalline Zn doped p-type β -Ga 2 O 3 nanowires

(2016) Qiuju Feng et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

(2016) K. Hoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

(2016) Marko J. Tadjer et al.   JOURNAL OF ELECTRONIC MATERIALS

Oxide bipolar electronics: materials, devices and circuits

(2016) Marius Grundmann et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Theoretical and experimental investigation of optical absorption anisotropy inβ-Ga2O3

(2016) F Ricci et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

P-type transparent conducting oxides

(2016) Kelvin H L Zhang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Large conduction band offset at SiO2/β-Ga2O3heterojunction determined by X-ray photoelectron spectroscopy

(2016) Keita Konishi et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

(2016) Chang Yang et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

(2016) Wei Li et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulatingβ-Ga2O3single crystal along [100], [010] and [001]

(2016) M Handwerg et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures

(2016) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

(2016) R. J. Kaplar et al.   ECS Journal of Solid State Science and Technology

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Nanocrystalline Diamond Integration with III-Nitride HEMTs

(2016) T. J. Anderson et al.   ECS Journal of Solid State Science and Technology

Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

(2016) Zbigniew Galazka et al.   ECS Journal of Solid State Science and Technology

Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga 2 O 3 Layers Grown by MOVPE on (010)-Oriented Substrates

(2016) Michele Baldini et al.   ECS Journal of Solid State Science and Technology

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates

(2015) Yuichi Oshima et al.   Applied Physics Express

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

(2015) Ye Jia et al.   APPLIED PHYSICS LETTERS

Electrical compensation by Ga vacancies in Ga2O3 thin films

(2015) E. Korhonen et al.   APPLIED PHYSICS LETTERS

Lattice thermal conductivity in β-Ga2O3 from first principles

(2015) Marco D. Santia et al.   APPLIED PHYSICS LETTERS

Anisotropic thermal conductivity in single crystal β-gallium oxide

(2015) Zhi Guo et al.   APPLIED PHYSICS LETTERS

Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

(2015) Enrico Santi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

(2015) Takeyoshi Onuma et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Characterization of defects in β-Ga2O3 single crystals

(2015) Katsuhiko Nakai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1−x)2O3 films

(2015) Ryo Wakabayashi et al.   JOURNAL OF CRYSTAL GROWTH

β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

(2015) Stephen W. Kaun et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Temperature-dependent thermal conductivity in Mg-doped and undopedβ-Ga2O3bulk-crystals

(2015) M Handwerg et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

(2015) Gang Liu et al.   Applied Physics Reviews

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3

(2014) Ting-Hsiang Hung et al.   APPLIED PHYSICS LETTERS

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

(2014) Patrick Fiorenza et al.   APPLIED PHYSICS LETTERS

Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

(2014) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

(2014) Takafumi Kamimura et al.   APPLIED PHYSICS LETTERS

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

(2014) H. Kawarada et al.   APPLIED PHYSICS LETTERS

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

(2014) N. Yafune et al.   ELECTRONICS LETTERS

Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices

(2014) Arvid Merkert et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

(2014) Zbigniew Galazka et al.   JOURNAL OF CRYSTAL GROWTH

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

(2014) Nick M. Sbrockey et al.   JOURNAL OF ELECTRONIC MATERIALS

Diamond surface conductivity: Properties, devices, and sensors

(2014) Christopher I. Pakes et al.   MRS BULLETIN

Temperature-dependent electrical characterization of exfoliatedβ-Ga2O3micro flakes

(2014) R. Mitdank et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Orientedβ-Ga2O3Nanobelts

(2014) Rujia Zou et al.   Small

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

(2014) Andres Castellanos-Gomez et al.   2D Materials

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

(2013) T. Onuma et al.   APPLIED PHYSICS LETTERS

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

(2013) Gang Liu et al.   IEEE ELECTRON DEVICE LETTERS

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

(2013) D. Gogova et al.   JOURNAL OF CRYSTAL GROWTH

Cuprous iodide: A p-type transparent semiconductor, history, and novel applications

(2013) Marius Grundmann et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

(2013) Guenter Wagner et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ab initiocalculations on the defect structure ofβ-Ga2O3

(2013) T. Zacherle et al.   PHYSICAL REVIEW B

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Merits of gallium nitride based power conversion

(2013) Mark J Scott et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2

(2012) Hisashi Sato et al.   DIAMOND AND RELATED MATERIALS

Design and Implementation of a Highly Efficient Three-Level T-Type Converter for Low-Voltage Applications

(2012) Mario Schweizer et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Successful Growth of Conductive Highly Crystalline Sn-Doped $\alpha$-Ga$_{2}$O$_{3}$ Thin Films by Fine-Channel Mist Chemical Vapor Deposition

(2012) Toshiyuki Kawaharamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition

(2012) Takayoshi Oshima et al.   JOURNAL OF CRYSTAL GROWTH

On the possibility of p-type SnO2

(2012) David O. Scanlon et al.   JOURNAL OF MATERIALS CHEMISTRY

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer

(2011) Rikiya Suzuki et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

(2011) A. F. Basile et al.   JOURNAL OF APPLIED PHYSICS

Hydrogen donors and Ti3+ ions in reduced TiO2 crystals

(2011) A. T. Brant et al.   JOURNAL OF APPLIED PHYSICS

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Limits to doping in oxides

(2011) J. Robertson et al.   PHYSICAL REVIEW B

Fabrication and characteristics of N-doped β-Ga2O3 nanowires

(2010) L. L. Liu et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

(2010) Sang-Yun Sung et al.   APPLIED PHYSICS LETTERS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Fluorine donors andTi3+ions inTiO2crystals

(2010) Shan Yang et al.   PHYSICAL REVIEW B

Atomic nitrogen doping and p-type conduction in SnO2

(2009) S. S. Pan et al.   APPLIED PHYSICS LETTERS

Hydrogen interactions with acceptor impurities inSnO2: First-principles calculations

(2009) J. B. Varley et al.   PHYSICAL REVIEW B

Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors

(2009) Stephan Lany et al.   PHYSICAL REVIEW B

The CVD of Nanodiamond Materials

(2008) James E. Butler et al.   CHEMICAL VAPOR DEPOSITION

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE