Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

We report (010)-oriented beta-Ga2O3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O-2 and SiCl4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of -190V, and maximum vertical electric fields of 4.2MV/cm in the center and 5.9MV/cm at the edge were estimated, with extrinsic R-ON of 3.9m Omega.cm(2) and extracted intrinsic R-ON of 0.023m Omega.cm(2). The reported results demonstrate the high quality of homoepitaxial LPCVD-grown beta-Ga2O3 thin films for vertical power electronics applications, and show that this growth method is promising for future beta-Ga2O3 technology. (C) 2018 The Japan Society of Applied Physics