期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 28, 期 22, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0953-8984/28/22/224005
关键词
optical absorption; ab initio band theory; optical polarization
资金
- MIUR PRIN 'Oxide'
- Fondazione Banco di Sardegna
- CAR of Uni Cagliari
- CINECA
- Fondazione Cariparma
- Grants-in-Aid for Scientific Research [25289093] Funding Source: KAKEN
The question of optical bandgap anisotropy in the monoclinic semiconductor beta-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods. As expected, the bandgap edge of bulk beta-Ga2O3 was found to be a function of light polarization and crystal orientation, with the lowest onset occurring at polarization in the ac crystal plane around 4.5-4.6 eV; polarization along b unambiguously shifts the onset up by 0.2 eV. The theoretical analysis clearly indicates that the shift in the b onset is due to a suppression of the transition matrix elements of the three top valence bands at Gamma point.
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