Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3

标题
Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 7, Pages 071101
出版商
Japan Society of Applied Physics
发表日期
2017-06-14
DOI
10.7567/jjap.56.071101

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