Article
Engineering, Electrical & Electronic
Hiroyuki Nishinaka, Tatsuji Nagaoka, Yuki Kajita, Masahiro Yoshimoto
Summary: Utilizing mist chemical vapor deposition (CVD) process, rapid homoepitaxial growth of beta-Ga2O3 thin films with smooth surfaces was achieved using a concentrated aqueous solution of GaCl3 precursor.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Physics, Multidisciplinary
Liu Wei, Feng Qiu-Ju, Yi Zi-Qi, Yu Chen, Wang Shuo, Wang Yan-Ming, Sui Xue, Liang Hong-Wei
Summary: Solar-blind UV photodetectors have wide applications in missile tracking, fire detection, biochemical analysis, astronomical observations, and space-to-space communications. This study focuses on the development of high-performance solar-blind UV photodetectors using 13-Ga2O3 thin films doped with different concentrations of Cu. The Cu-doped 13-Ga2O3 thin films exhibit improved morphology, crystal structure, and optical properties. The devices based on Cu-doped 13-Ga2O3 thin films demonstrate enhanced UV detection performance with increased Cu content.
ACTA PHYSICA SINICA
(2023)
Article
Nanoscience & Nanotechnology
A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Summary: Single alpha-phase (AlxGa1-x)(2)O-3 thin films were successfully grown on m-plane sapphire substrates via metalorganic chemical vapor deposition, demonstrating high quality and uniformity. The influence of growth parameters on film properties was further investigated. X-ray photoelectron spectroscopy was employed to characterize the aluminum content and bandgaps, with the band alignment at heterojunctions also studied.
Article
Chemistry, Physical
Weiqu Chen, Zimin Chen, Zeqi Li, Zeyuan Fei, Yanli Pei, Gang Wang, Zhiyuan He
Summary: High quality epsilon-phase gallium oxide (Ga2O3) thin films have been successfully grown on silicon substrates using metal-organic chemical vapor deposition (MOCVD). The growth pressure is found to be an important parameter that affects the thin film quality.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Inorganic & Nuclear
Aida Raauf, Jennifer Leduc, Michael Frank, Daniel Stadler, David Graf, Michael Wilhelm, Matthias Grosch, Sanjay Mathur
Summary: In this study, UO2 thin films were synthesized by CVD using a U(VI) precursor, and it was found that the application of magnetic fields can alter the morphology and crystallographic orientation of grains, reduce grain size, promote polycrystalline growth, and decrease surface oxidation of U(IV) centers. The presence of a magnetic field as an extrinsic parameter in the CVD process has a positive effect on controlling the texture and chemical homogeneity of the grown films.
INORGANIC CHEMISTRY
(2021)
Article
Materials Science, Multidisciplinary
Yujia Jiao, Qian Jiang, Junhua Meng, Jinliang Zhao, Zhigang Yin, Hongli Gao, Jing Zhang, Jinxiang Deng, Xingwang Zhang
Summary: The study investigates the influence of different growth parameters and substrate surface morphology on the crystallinity and surface roughness of beta-Ga2O3 thin films. It is found that beta-Ga2O3 film grown on sapphire substrate exhibits a smoother surface, but there is a trade-off between crystallization and surface roughness.
Article
Polymer Science
Sebastien Buchwalder, Aurelio Borzi, Juan J. Diaz Leon, Florian Bourgeois, Cleo Nicolier, Sylvain Nicolay, Antonia Neels, Olaf Zywitzki, Andreas Hogg, Jurgen Burger
Summary: This study investigated the thermal impact on different types of Parylene films and evaluated their potential for high-temperature applications through analysis of thermal properties, structural properties, and barrier properties.
Article
Materials Science, Coatings & Films
Md Rezaul Karim, Zhaoying Chen, Zixuan Feng, Hsien-Lien Huang, Jared M. Johnson, Marko J. Tadjer, Jinwoo Hwang, Hongping Zhao
Summary: In this study, heteroepitaxy of beta -Ga2O3 films on diamond substrates was successfully achieved, demonstrating the feasibility of potential device design and device fabrication with efficient thermal management. The Si-doped beta -Ga2O3 film exhibited N-type electrical conductivity, showcasing the potential for application in high power and high frequency devices. The interface between beta -Ga2O3 and diamond was found to be void-free, essential for high rate of heat transfer across the interface.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Materials Science, Multidisciplinary
L. Zauner, R. Hahn, E. Aschauer, T. Wojcik, A. Davydok, O. Hunold, P. Polcik, H. Riedl
Summary: This study investigates the fracture toughness and fatigue properties of thin films under various loading conditions, revealing their characteristics and possible deformation mechanisms. The findings contribute to improving the durability of coated engineering components.
Article
Materials Science, Ceramics
Xiao Tang, Kuang-Hui Li, Che-Hao Liao, Jose Manuel Taboada Vasquez, Chuanju Wang, Na Xiao, Xiaohang Li
Summary: The study presents a novel CSD technique for depositing highly epitaxial indium and aluminum-doped Ga2O3 thin films, showing pure beta phase with good crystallization qualities. The incorporation of indium and aluminum shifts the crystallization of the thin films to lower and higher temperatures, respectively, and the bandgap of the sintered thin films can be tuned from 4.05 to 5.03 eV using mixed precursor solutions. Photodetectors based on the samples exhibit maximum photocurrents at different wavelengths, suggesting potential for producing high-quality bandgap tunable deep ultraviolet photoelectrical and high-power devices.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2022)
Article
Crystallography
Feifei Lan, Rui Zhou, Ziyue Qian, Yuansha Chen, Liming Xie
Summary: In this study, Fe3O4 thin films with room-temperature ferrimagnetism were successfully grown using a simple chemical vapor deposition method. The films maintained good magnetic properties even at thicknesses as low as 4 nm. Various analysis techniques were used to study the structure and quality of the films, and it was found that the saturation magnetization was higher than that of bulk materials and the Verwey transition was observed. This work provides a new method for synthesizing ultrathin films with ferrimagnetic properties for applications in electronics, spintronics, and memory devices.
Article
Materials Science, Multidisciplinary
Aaron J. McLeod, Scott T. Ueda, Ping C. Lee, Jeff Spiegelman, Ravindra Kanjolia, Mansour Moinpour, Jacob Woodruff, Andrew C. Kummel
Summary: In this study, low temperature AlN deposition was achieved on Si(100), Si(111), and 4H-SiC substrates using a metal precursor with high thermal stability and a highly reactive nitrogen source. Two different processes, a 580°C pulsed chemical vapor deposition (CVD) and a more complex 400°C atomic layer annealing process, were compared. Both processes showed comparable enhancement in crystallinity of the subsequently sputtered AlN films.
Article
Chemistry, Multidisciplinary
Paolo Giusto, Daniel Cruz, Tobias Heil, Nadezda Tarakina, Maddalena Patrini, Markus Antonietti
Summary: By chemically vapor depositing BCN thin films from a single source precursor, high transparency and refractive index values for reflective mirrors and lenses are achieved. These wide-bandgap semiconductor materials, with positive valence band, demonstrate stability against oxidation making them ideal for protective coatings and charge transport layers in solar cells. The simple and low-hazard method can open up possibilities for BCN thin films in optics and optoelectronics.
Article
Materials Science, Multidisciplinary
Antoine Raison, Nathalie Prud'homme, Wu Wang, Diana Dragoe, Nita Dragoe
Summary: We have successfully synthesized a multi-cationic oxide (MgCoNiCuZn)O through pulsed liquid injection chemical vapor deposition. The synthesis was carried out at temperatures ranging from 400 degrees C to 550 degrees C, using five metal-organic precursors solubilized in dimethoxyethane (DME). The microstructure of the material was analyzed using HRTEM with HAADF, SEM, EDS, XPS, and XRD techniques before and after annealing.
Article
Engineering, Chemical
David Redka, Milan Buttberg, Gerhard Franz
Summary: This article discusses the issue of longitudinal decreasing film thickness and its solution, providing a theoretical model and experimental verification. By predicting the sticking coefficient curve, the actual homogeneous film thickness can be obtained and shown to be in good agreement with the prediction. Additionally, it is found that there is a maximum achievable homogeneous film thickness in the tube, which can be understood as the coating efficiency.
Article
Optics
Partha Mukhopadhyay, Winston Schoenfeld
Article
Nanoscience & Nanotechnology
Fikadu Alema, Brian Hertog, Partha Mukhopadhyay, Yuewei Zhang, Akhil Mauze, Andrei Osinsky, Winston V. Schoenfeld, James S. Speck, Timothy Vogt
Article
Materials Science, Coatings & Films
Partha Mukhopadhyay, Winston V. Schoenfeld
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2020)
Article
Physics, Applied
Isa Hatipoglu, Partha Mukhopadhyay, Fikadu Alema, Tamil S. Sakthivel, Sudipta Seal, Andrei Osinsky, Winston Schoenfeld
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Materials Science, Multidisciplinary
Kortan Ogutman, Nafis Iqbal, Geoffrey Gregory, Mengjie Li, Michael Haslinger, Emanuele Cornagliotti, Winston Schoenfeld, Joachim John, Kristopher O. Davis
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2020)
Article
Physics, Applied
Isa Hatipoglu, Daniel A. Hunter, Partha Mukhopadhyay, Martin S. Williams, Paul R. Edwards, Robert W. Martin, Winston Schoenfeld, G. Naresh-Kumar
Summary: This study demonstrates the heterogeneous integration of beta-(SnxGa1-x)2O-3 (TGO) UV-C photodetectors on silicon substrates by molecular beam epitaxy, revealing a direct correlation between the structural, compositional, and optical properties of TGO and the functional properties of the photodetectors through multimodal electron microscopy and spectroscopy techniques. Alloying Ga2O3 with Sn is shown to quench the red emission and enhance the blue emission, resulting in improved performance of the TGO detectors.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Partha Mukhopadhyay, Isa Hatipoglu, Ymir K. Frodason, Joel B. Varley, Martin S. Williams, Daniel A. Hunter, Naresh K. Gunasekar, Paul R. Edwards, Robert W. Martin, Feng Wu, Akhil Mauze, James S. Speck, Winston V. Schoenfeld
Summary: In this work, ultra-high responsivity of epitaxial (SnxGa1-x)(2)O-3 (TGO) Schottky UV-C photodetectors was reported and the source of gain was experimentally identified as deep-level defects, supported by first principles calculations. By regenerating defects through optimizing growth techniques, a planar Schottky UV-C photodetector with highest peak responsivity was demonstrated.
APPLIED PHYSICS LETTERS
(2022)
Article
Energy & Fuels
Munan Gao, Vibhor Kumar, Winston Schoenfeld, Ngwe Zin
Summary: We demonstrate the versatile use of UV-ozone oxide (UVo) in various applications of crystalline silicon (c-Si) solar cells, including surface cleaning, passivation, diffused junction passivation, and current tunneling. The UVo clean shows comparable cleaning efficiency to the benchmarked RCA clean. UV-ozone growth time of no more than 3 mins provides optimum surface passivation. The UVo and AlOx stack results in low saturation current density, effective junction passivation, and low contact resistivity for metal-insulator-semiconductor contact structures.
IEEE JOURNAL OF PHOTOVOLTAICS
(2023)
Proceedings Paper
Energy & Fuels
Munan Gao, Winston Schoenfeld, Ismail Kashkoush, Ngwe Zin
Summary: Experimental results demonstrate the effective use of UV-ozone oxide layer in passivation and current tunneling applications of crystalline silicon solar cells. The combination of UV-ozone oxide and AlOx stack shows promising results in improving the passivation quality of moderately diffused junctions. The UV-ozone oxide layer is also considered as a passivating contact material and can achieve low contact resistivity for boron and phosphorus passivating contact structures with moderately doped diffusions.
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2021)
Article
Materials Science, Multidisciplinary
Partha Mukhopadhyay, Isa Hatipoglu, Tamil Selvan Sakthivel, Daniel A. Hunter, Paul R. Edwards, Robert W. Martin, Gunasekar Naresh-Kumar, Sudipta Seal, Winston Schoenfeld
Summary: A high figure-of-merit UV-C solar-blind photodetector fabricated from thin-film beta-gallium oxide grown on n-Si substrates by plasma-assisted molecular beam epitaxy demonstrates ultra-high responsivity and fast ON/OFF time. The methodology allows for tailoring of the photodetector characteristics for specific applications by modifying the defect levels through controlling the growth conditions. The photodetectors also exhibit strong rectifying properties and a sharp cutoff below 280nm, offering new possibilities for on-wafer integration with Si opto-electronics.
ADVANCED PHOTONICS RESEARCH
(2021)
Proceedings Paper
Energy & Fuels
Haider Ali, Munan Gao, Ngwe Zin, Sara Bakhshi, Winston V. Schoenfeld, Kristopher O. Davis
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2019)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)
