Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

This study demonstrated the exfoliation of a two-dimensional (2D) beta-Ga2O3 nano-belt and subsequent processing into a thin film transistor structure. This mechanical exfoliation and transfer method produces beta-Ga2O3 nano-belts with a pristine surface as well as a continuous defect-free interface with the SiO2/Si substrate. This beta-Ga2O3 nano-belt based transistor displayed an on/off ratio that increased from approximately 10(4) to 10(7) over the operating temperature range of 20 degrees C to 250 degrees C. No electrical breakdown was observed in our measurements up to V-DS = +40 V and V-GS = -60 V between 25 degrees C and 250 degrees C. Additionally, the electrical characteristics were not degraded after a month-long storage in ambient air. The demonstration of high-temperature/high-voltage operation of quasi-2D beta-Ga2O3 nano-belts contrasts with traditional 2D materials such as transition metal dichalcogenides that intrinsically have limited temperature and power operational envelopes owing to their narrow bandgap. This work motivates the application of 2D beta-Ga2O3 to high power nano-electronic devices for harsh environments such as high temperature chemical sensors and photodetectors as well as the miniaturization of power circuits and cooling systems in nano-electronics.