Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

(2013) T. Onuma et al.   APPLIED PHYSICS LETTERS

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics

(2011) Neeraj Nepal et al.   Applied Physics Express

Czochralski growth and characterization of β-Ga2O3 single crystals

(2010) Z. Galazka et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

(2010) Yujin Hori et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

(2008) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS