Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

标题
Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 7, Pages 078004
出版商
Japan Society of Applied Physics
发表日期
2017-06-22
DOI
10.7567/jjap.56.078004

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now